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AUIRG4BC30SS价格
参考价格：￥10.4054
型号：AUIRG4BC30SSTRL 品牌：IR 备注：这里有AUIRG4BC30SS多少钱，2026年最近7天走势，今日出价，今日竞价，AUIRG4BC30SS批发/采购报价，AUIRG4BC30SS行情走势销售排行榜，AUIRG4BC30SS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( | IRF | |
AUIRG4BC30SS产品属性
- 类型
描述
- 型号
AUIRG4BC30SS
- 功能描述
IGBT 晶体管 600V AUTO DC-1 KHZ DISCRETE IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT/24p/sealedpackage |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
IR |
08+ |
TO-263 |
1995 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO-263 |
25000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
08+ |
TO-263 |
3000 |
||||
Infineon Technologies |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
|||
IR |
21+ |
TO-263 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
03+ |
TO-252 |
1000 |
自己公司全新库存绝对有货 |
|||
IR |
24+ |
TO-263 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
IR |
24+ |
TO263 |
9300 |
||||
IR |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
AUIRG4BC30SS芯片相关品牌
AUIRG4BC30SS规格书下载地址
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AUIRG4BC30SS数据表相关新闻
AV1-1A211A-R00
只做原装
2023-5-31AUIRFS4127
原装正品现货
2022-6-29AUIRS2181STR
AUIRS2181STR
2022-3-4AUIRS2336STR
厂商名称 Infineon 包装说明 SOP， SOP28，.4 Reach Compliance Code compliant ECCN代码 EAR99 Factory Lead Time 26 weeks Samacsys Description Gate Drivers 3-Phase Bridge DRVR 600V 200mA 275ns 内置保护 TRANSIENT;_OVER CURRENT;_THERMAL;_UNDER VOLTAGE 接口集成电路类型 BUFFER OR INVERTER BASED MOSFET
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AUIRFN8459PBF，全新原装当天发货或门市自取0755-82732291.
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2020-1-11
DdatasheetPDF页码索引
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