丝印代码：35N60C3；CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

丝印代码：35N60DM2；Extremely high dv/dt ruggedness

Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologi

丝印代码：35N60AP；35A 600V N-channel enhanced field effect transistor

文件：851.66 Kbytes Page：5 Pages

丝印代码：35N60APS；35A 600V N-channel enhanced field effect transistor

文件：851.66 Kbytes Page：5 Pages

CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

CoolMOS™ Power Transistor

• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dtrated\n• Ultra low effective capacitances\n• Improved transconductance;

COOLMOS® Power MOSFET

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge • fast COOLMOS®* power MOSFET 4th generation\n - High blocking capability\n - Lowest resistance\n - Avalanche rated for unclamped  inductive switching (UIS)\n - Low thermal resistance   due to reduced chip thickness\n• Enhanced total power densityApplications\n• Switched mode power supplies(SMPS)\n•;

CoolMOS™ Power Transistor

• New revolutionary high voltage technology\n• Intrinsic fast-recovery body diode\n• Extremely low reverse recovery charge\n• Ultra low gate charge\n• Extreme dv/dtrated\n• High peak current capability\n• Periodic avalanche rated;

35A 600V N-channel enhanced field effect transistor

文件：851.66 Kbytes Page：5 Pages

600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Periodic avalanche rated

CoolMOSTM Power Transistor

文件：736.17 Kbytes Page：13 Pages