IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 250W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

NPT 标准 IGBT

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 60A 250W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

NPT 标准 IGBT

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

35A 600V N-channel enhanced field effect transistor

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N-Channel Enhancement Mode MOSFET

文件：260.05 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：243.21 Kbytes Page：4 Pages