CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Periodic avalanche rated

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤118mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOSTM Power Transistor

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CoolMOSTM Power Transistor

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600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

35A 600V N-channel enhanced field effect transistor

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

文件：243.21 Kbytes Page：4 Pages