35A 600V N-channel enhanced field effect transistor

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丝印代码：35N60AP；35A 600V N-channel enhanced field effect transistor

文件：851.66 Kbytes Page：5 Pages

丝印代码：35N60APS；35A 600V N-channel enhanced field effect transistor

文件：851.66 Kbytes Page：5 Pages

600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Periodic avalanche rated

CoolMOSTM Power Transistor

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