Extremely high dv/dt ruggedness

Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologi

N沟道600 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，TO-247封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.11Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Extremely low gate charge and input capacitance

文件：915.26 Kbytes Page：15 Pages

Extremely high dv/dt ruggedness

文件：691.27 Kbytes Page：13 Pages

Extremely high dv/dt ruggedness

文件：733.44 Kbytes Page：13 Pages