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STW35N60DM2中文资料

厂家型号

STW35N60DM2

文件大小

704.98Kbytes

页面数量

12

功能描述

Extremely high dv/dt ruggedness

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

STW35N60DM2数据手册规格书PDF详情

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Features

 Fast-recovery body diode

 Extremely low gate charge and input

capacitance

 Low on-resistance

 100 avalanche tested

 Extremely high dv/dt ruggedness

 Zener-protected

Applications

 Switching applications

更新时间:2025-12-5 14:17:00
供应商 型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
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con
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十年信誉,只做原装,有挂就有现货!
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勤思达只做原装 现货库存 支持支持实单
ST/意法半导体
22+
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原装正品现货 可开增值税发票
ST(意法半导体)
24+
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7814
支持大陆交货,美金交易。原装现货库存。
ST
17+
TO247
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100%原装正品现货
ST/意法半导体
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20000
现货
ST/意法
24+
TO-247
60000