COOLMOS® Power MOSFET

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge • fast COOLMOS®* power MOSFET 4th generation\n - High blocking capability\n - Lowest resistance\n - Avalanche rated for unclamped  inductive switching (UIS)\n - Low thermal resistance   due to reduced chip thickness\n• Enhanced total power densityApplications\n• Switched mode power supplies(SMPS)\n•;

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Features • fast COOLMOS®* power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to red

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Features • fast COOLMOS®* power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to red

isc N-Channel MOSFET Transistor

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