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2SK41价格

参考价格：￥13.6071

型号：2SK4124-1E 品牌：ON 备注：这里有2SK41多少钱，2025年最近7天走势，今日出价，今日竞价，2SK41批发/采购报价，2SK41行情走势销售排行榜，2SK41报价。

型号	功能描述	生产厂家企业	LOGO
2SK410	Silicon N-Channel MOS FET (HF/VHF power amplifier) Features · High breakdown voltage · You can decrease handling current. · Included gate protection diode · No secondary–breakdown · Wide area of safe operation · Simple bias circuitry · No thermal runaway Application HF/VHF power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK410	SILICON N-CHANNEL MOS FET DESCRIPTION: The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. FEATURES: • PG = 17 dB typ. at 100 W/28 MHz • Omnigold™ Metalization System • Common Source configuration • RoHS compliant	ASI	ASI
2SK4100LS	N-Channel Silicon MOSFET General-Purpose Switching Device Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4101FG	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4101FS	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features •Low ON-resistance. •High-speed switching. •10V drive. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4101LS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4103	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4106	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4107	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4107	Switching Regulator Applications Switching Regulator Applications • Low drain−source ON resistance : RDS(ON) = 0. 33 Ω(typ.) • High forward transfer admittance : \|Yfs\| = 8.5 S (typ.) • Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) • Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4108	Silicon N-Channel MOS Type Switching Regulator Applications Switching Regulator Applications Low drain−source ON resistance : RDS (ON)= 0. 21Ω(typ.) High forward transfer admittance : \|Yfs\| = 14 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4108	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4110	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4111	Switching Regulator Applications Features • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4112	Switching Regulator Applications Features • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.5S (typ.) • Low leakage current: IDSS = 100μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4113	Switching Regulator Applications Features • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4115	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4115	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4116LS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4117LS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4124	N-Channel Silicon MOSFET General-Purpose Switching Device N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • Adoption of high reliability HVP process • Avalanche resistance guarantee	SANYO 三洋	SANYO
2SK4125	null8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)=0.47Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive	ONSEMI 安森美半导体	ONSEMI
2SK4125	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=0.47Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive	SANYO 三洋	SANYO
2SK4125-1E	null8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)=0.47Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive	ONSEMI 安森美半导体	ONSEMI
2SK4126	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4136	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4137	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4138	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4143	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low input	RENESAS 瑞萨	RENESAS
2SK4143-S17-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low input	RENESAS 瑞萨	RENESAS
2SK4144	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low i	RENESAS 瑞萨	RENESAS
2SK4144-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low i	RENESAS 瑞萨	RENESAS
2SK4144-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low i	RENESAS 瑞萨	RENESAS
2SK4145	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP.	RENESAS 瑞萨	RENESAS
2SK4145A	N-channel MOSFET 60 V, 84 A, 10 mΩ Description The 2SK4145A is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 3310 pF TYP. (VDS = 10 V, VGS = 0 V) • High current ID(DC) =	RENESAS 瑞萨	RENESAS
2SK4145A-S19-AY	N-channel MOSFET 60 V, 84 A, 10 mΩ Description The 2SK4145A is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 3310 pF TYP. (VDS = 10 V, VGS = 0 V) • High current ID(DC) =	RENESAS 瑞萨	RENESAS
2SK4145-S19-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP.	RENESAS 瑞萨	RENESAS
2SK4146	MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V)	RENESAS 瑞萨	RENESAS
2SK4146-S19-AY	MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V)	RENESAS 瑞萨	RENESAS
2SK4147	Old Company Name in Catalogs and Other Documents DESCRIPTION The 2SK4147 is a switching element that is most suitable for use in DC-DC converter whose DC input voltage is 24 to 48 V. Having low on-resistance, excelling in the switching characteristics, and providing the small surface mounting outline, the 2SK4147 is ideal for use in high-spee	RENESAS 瑞萨	RENESAS
2SK4148	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4148 is a switching element that is most suitable for use in DC-DC converter whose DC input voltage is 24 to 48 V. Having low on-resistance, and excelling in the switching characteristics, the 2SK4148 is ideal for use in high-speed switching. DESCRIPTION The 2SK4148 is a	RENESAS 瑞萨	RENESAS
2SK4150	Silicon N Channel MOS FET High Speed Power Switching Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)	RENESAS 瑞萨	RENESAS
2SK4150TZ-E	Silicon N Channel MOS FET High Speed Power Switching Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)	RENESAS 瑞萨	RENESAS
2SK4151	Silicon N Channel MOS FET High Speed Power Switching Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 1.5Ω typ. (at ID = 0.5 A, VGS = 4 V, Ta = 25°C)	RENESAS 瑞萨	RENESAS
2SK4151TZ-E	Silicon N Channel MOS FET High Speed Power Switching Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 1.5Ω typ. (at ID = 0.5 A, VGS = 4 V, Ta = 25°C)	RENESAS 瑞萨	RENESAS
2SK416	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING Complementary pair with 2SJ120L, 2SJ120S	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK4164	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK416L	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING Complementary pair with 2SJ120L, 2SJ120S	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK416S	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING Complementary pair with 2SJ120L, 2SJ120S	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK417	2SK417 HIGH SPEED SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.	TOSHIBA 东芝	TOSHIBA
2SK4171	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Motor drive applications. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4177	N-Channel Power MOSFET N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive	ONSEMI 安森美半导体	ONSEMI
2SK4177	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive	SANYO 三洋	SANYO
2SK4177-DL-1E	N-Channel Power MOSFET N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive	ONSEMI 安森美半导体	ONSEMI
2SK4177-DL-E	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4178	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ	RENESAS 瑞萨	RENESAS
2SK4178	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m	NEC 瑞萨	NEC
2SK4178-S27-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m	NEC 瑞萨	NEC
2SK4178-S27-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ	RENESAS 瑞萨	RENESAS
2SK4178-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ	RENESAS 瑞萨	RENESAS

2SK41产品属性

类型
描述
型号
2SK41
制造商
ASI
制造商全称
ASI
功能描述
SILICON N-CHANNEL MOS FET

2SK41供应商更多...

更新时间：2025-12-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	2SK4178-ZK-E1-AY	RENESAS	2511	TO-252	200	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
贸泽芯城（深圳）电子科技有限公司	2SK4181	POWER INTEGRATIONS/帕沃英蒂格	23+	TO-263	79850	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市得捷芯城科技有限公司	2SK4178-ZK-E1-AY	RENESAS/瑞萨	24+	NA/	3350	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	2SK4180-T1-A	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
洪芯国际半导体（深圳）有限公司	2SK4178-ZK	NEC	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
中天科工半导体（深圳）有限公司	2SK4178-ZK-E1-AY	RENESAS	20+	TO-252	63258	原装优势主营型号-可开原型号增税票	询价
深圳市纳立科技有限公司	2SK4181-TL-E		三年内		1983	只做原装正品	询价
现代芯城（深圳）科技有限公司	2SK4178-ZK-E1-AY		24+	N/A	52000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛美科科技有限公司	2SK4178-ZK-E1-AY	RENESAS		TO-252	35500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市威尔健半导体有限公司	2SK4178-ZK	FAIRCHILD/仙童	23+	TO-251	69820	终端可以免费供样,支持BOM配单!	询价

2SK41芯片相关品牌

2SK41规格书下载地址

2SK41参数引脚图相关

2SK41数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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