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2SK417价格
参考价格：￥19.7589
型号：2SK4177-DL-1E 品牌：ON Semiconductor 备注：这里有2SK417多少钱，2025年最近7天走势，今日出价，今日竞价，2SK417批发/采购报价，2SK417行情走势销售排行榜，2SK417报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK417 | 2SK417 HIGH SPEED SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. | TOSHIBA 东芝 |   | |
2SK417 | 2SK417 | TOSHIBA 东芝 | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Motor drive applications. • Avalanche resistance guarantee. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive | SANYO 三洋 | | ||
N-Channel Power MOSFET N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee. | SANYO 三洋 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m | NEC 瑞萨 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive. | SANYO 三洋 | | ||
isc N-Channel MOSFET Transistor 文件：332.33 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N-channel enhancement MOS FET | Panasonic 松下 | | ||
N 沟道功率 MOSFET，1500V，2A，13Ω，TO-263-2L | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor 文件：276.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
General-Purpose Switching Device Applications 文件：399.05 Kbytes Page：7 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：399.05 Kbytes Page：7 Pages | SANYO 三洋 | | ||
isc N-Channel MOSFET Transistor 文件：399.19 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：331.64 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：333.79 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK417产品属性
- 类型
描述
- 型号
2SK417
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
2SK417
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON(安森美) |
24+ |
TO-263-3 |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
24+ |
60000 |
||||||
RENESAS/瑞萨 |
24+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
Panasonic |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
|||
ON/安森美 |
25+ |
NV |
860000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
三年内 |
1983 |
只做原装正品 |
2SK417规格书下载地址
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