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2SK417价格

参考价格:¥19.7589

型号:2SK4177-DL-1E 品牌:ON Semiconductor 备注:这里有2SK417多少钱,2026年最近7天走势,今日出价,今日竞价,2SK417批发/采购报价,2SK417行情走势销售排行榜,2SK417报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK417

2SK417

HIGH SPEED SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

TOSHIBA

东芝

2SK417

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=10A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK417

2SK417

TOSHIBA

东芝

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Motor drive applications. • Avalanche resistance guarantee.

SANYO

三洋

N-Channel Power MOSFET

N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive

SANYO

三洋

N 沟道功率 MOSFET,1500V,2A,13Ω,TO-263-2L

2SK4177 is an N-Channel Power MOSFET, 1500V, 2A, 13Ω, TO-263-2L for General-Purpose Switching Device Application. ON-resistance RDS(on) = 10Ω (typ)\nInput capacitance Ciss = 380pF (typ)\n10V drive;

ONSEMI

安森美半导体

N-Channel Power MOSFET

N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.

SANYO

三洋

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive.

SANYO

三洋

General-Purpose Switching Device Applications

Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive.

SANYO

三洋

isc N-Channel MOSFET Transistor

文件:332.33 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N-channel enhancement MOS FET

PANASONIC

松下

丝印代码:D2PAK;isc N-Channel MOSFET Transistor

文件:276.82 Kbytes Page:2 Pages

ISC

无锡固电

General-Purpose Switching Device Applications

文件:399.05 Kbytes Page:7 Pages

SANYO

三洋

General-Purpose Switching Device Applications

文件:399.05 Kbytes Page:7 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

文件:399.19 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:331.64 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:333.79 Kbytes Page:2 Pages

ISC

无锡固电

2SK417产品属性

  • 类型

    描述

  • Compliance:

    Pb-free

  • Status:

     Active  

  • Description:

     N-Channel Power MOSFET

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    Condition

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    3.5

  • ID Max (A):

    2

  • PD Max (W):

    80

  • RDS(on) Max @ VGS = 10 V(mΩ):

    13

  • Qg Typ @ VGS = 10 V (nC):

    Condition

  • Ciss Typ (pF):

    380

  • Package Type:

    D2PAK-3 / TO-263-2

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
11685
全新原装正品/价格优惠/质量保障
onsemi
25+
SMP-FD
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ONSEMI/安森美
25+
TO263
32360
ONSEMI/安森美全新特价2SK4177-DL-1E即刻询购立享优惠#长期有货
ON Semiconductor
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
ON/安森美
2450+
TO-263
6885
只做原装正品假一赔十为客户做到零风险!!
RENESAS
24+
TO-252
16900
原装正品现货支持实单
RENESAS/瑞萨
26+
TO-252
33500
全新进口原装现货,假一罚十
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
26+
TO-252
360000
进口原装现货
PANASONIC/松下
25+
TO-263
15000
一级代理原装现货

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