型号 功能描述 生产厂家 企业 LOGO 操作
2SK4178

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

2SK4178

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

2SK4178

isc N-Channel MOSFET Transistor

文件:399.19 Kbytes Page:2 Pages

ISC

无锡固电

2SK4178

Power MOSFETs

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

NEC

瑞萨

isc N-Channel MOSFET Transistor

文件:331.64 Kbytes Page:2 Pages

ISC

无锡固电

2SK4178产品属性

  • 类型

    描述

  • 型号

    2SK4178

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

更新时间:2025-11-24 9:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
RENESAS
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
24+
TO-252
60000
全新原装现货
RENESAS
25+
TO-252
8800
公司只做原装,详情请咨询
RENESAS
24+
TO-252
16900
原装正品现货支持实单
RENESAS
23+
null
7000
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
NEC
22+
SOT-252
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
24+
NA/
22800
优势代理渠道,原装正品,可全系列订货开增值税票

2SK4178数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

    2021-6-24
  • 2SX1-T

    2SX1-T,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-2-10
  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28