2SK33

2SK33

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

*
 High breakdown voltage: VGDS= −50 V *
 High input impedance: IGSS= −1nA (max) (VGS= −30 V) *
 Low RDS (ON): RDS (ON)= 320 Ω(typ.) (IDSS= 5 mA) *
 Complementary to 2SJ105 *
 Small package

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS)

Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulatorand DC-DC Converter Applications

Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulator, DC-DC Converter Applications

Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON)= 11.5 Ω(typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 500 V) • Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. FEATURES • Low gate charge : QG= 44 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 7.0 A) • Gat

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. FEATURES • Low gate charge : QG = 44 nC TYP. (VDD = 4

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3305 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low ga

MOS Field Effect Transistor

Features Low gate charge QG= 13 nC TYP. (VDD= 400V, VGS=10V,ID=5.0A) Gate voltage rating ±30 V Low on-state resistance RDS(on)=1.5 Ω MAX. (VGS=10V,ID=2.5A) Avalanche capability ratings

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3305 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low ga

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low ga

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3305 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) •

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 46

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) ● High forward transfer admittance : |Yfs| = 3.5 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Chopper Regulator

Chopper Regulator and DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time : trr = 90 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON-resistance : RDS (ON)= 0.5 Ω(typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)

Chopper Regulator and DC−DC Converter Applications Motor Drive Applications ● Fast reverse recovery time : trr = 105 ns (typ.) ● Built-in high-speed free-wheeling diode ● Low drain−source ON-resistance : RDS (ON) = 0.35 Ω (typ.) ● High forward transfer admittance : |Yfs| = 9.9 S (typ.) ● Low

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Fast reverse recovery time : trr = 60 ns (typ.) ● Built-in high-speed free-wheeling diode ● Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.) ● High forward transfer admittance : |Yfs| = 3.8 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS =

Silicon N-channel power MOSFET

Silicon N-channel power MOSFET For switching ■Features •Avalanche energy capability guaranteed •High-speed switching •Low ON resistance Ron •No secondary breakdown

SILICON N CHANNEL TRANSISTOR

SILICON N CHANNEL TRANSISTOR

N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

For Low Noise Audio Amplifier Applications

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

For Low Noise Audio Amplifier Applications

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS)

GENGERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATION Small Package High Input Impedance : IGSS= -1 nA(Max.) (VGS = -30V) Low Noise :NF =0.5dB(Typ.) (RG = 100KΩ, ㄹ = 120Hz)

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15

MOS Field Effect Transistor

Features ● Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8A) ● Avalanche capability ratings

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge :

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 32 nC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

MOS Field Effect Transistor

Features ● Low gate charge: ● QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating: ±30 V ● Low on-state resistance RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) ● Avalanche capability ratings