N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

*
 High breakdown voltage: VGDS= −50 V *
 High input impedance: IGSS= −1nA (max) (VGS= −30 V) *
 Low RDS (ON): RDS (ON)= 320 Ω(typ.) (IDSS= 5 mA) *
 Complementary to 2SJ105 *
 Small package

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

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Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS)

Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulatorand DC-DC Converter Applications

Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulator, DC-DC Converter Applications

Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON)= 11.5 Ω(typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 500 V) • Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 0.5 A \nPower Dissipation PD 1.3 W \nDrain-Source voltage VDSS 500 V ;

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.FEATURES\n• Low gate charge : QG= 44 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 7.0 A)\n• Gate voltage rati • Low gate charge : QG= 44 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 7.0 A)\n• Low on-state resistance : RDS(on)= 2.0 ΩMAX. (VGS= 10 V, ID= 4.0 A)\n• Avalanche capability ratings;

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. FEATURES • Low gate charge : QG = 44 nC TYP. (VDD = 4

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. FEATURES • Low gate charge : QG= 44 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 7.0 A) • Gat

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low ga

MOS Field Effect Transistor

Features Low gate charge QG= 13 nC TYP. (VDD= 400V, VGS=10V,ID=5.0A) Gate voltage rating ±30 V Low on-state resistance RDS(on)=1.5 Ω MAX. (VGS=10V,ID=2.5A) Avalanche capability ratings

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3305 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3305 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low ga

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low ga

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3305 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 13 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) •

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 46

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

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Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications

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Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications

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Switching Regulatorand DC-DC Converter Applications

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