位置：首页 > IC中文资料第1193页 > 2SK3325
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3325 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 |   | |
2SK3325 | MOS Field Effect Transistor Features ● Low gate charge: ● QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating: ±30 V ● Low on-state resistance RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) ● Avalanche capability ratings | KEXIN 科信电子 | | |
2SK3325 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | | |
2SK3325 | isc N-Channel MOSFET Transistor 文件：332.45 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：326.49 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：400.78 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3325产品属性
- 类型
描述
- 型号
2SK3325
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
11+ |
TO-220F |
3260 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2016+ |
TO-220 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
|||
NEC |
TO-220 |
6602 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
21+ |
TO-220 |
136 |
原装现货假一赔十 |
|||
NEC |
2014+ |
1238 |
公司现货库存 |
||||
NEC |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
NEC |
23+ |
TO-220 |
35890 |
||||
NEC |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
NEC |
24+ |
TO-263 |
6355 |
只做原厂渠道 可追溯货源 |
2SK3325芯片相关品牌
2SK3325规格书下载地址
2SK3325参数引脚图相关
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2SK3325数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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