SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15

isc N-Channel MOSFET Transistor

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

MOS Field Effect Transistor

Features ● Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8A) ● Avalanche capability ratings

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

isc N-Channel MOSFET Transistor

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