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2SK332价格
参考价格:¥1.6352
型号:2SK3320-BL(TE85L,F 品牌:Toshiba 备注:这里有2SK332多少钱,2025年最近7天走势,今日出价,今日竞价,2SK332批发/采购报价,2SK332行情走势销售排行榜,2SK332报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SK332 | SILICON N CHANNEL TRANSISTOR SILICON N CHANNEL TRANSISTOR | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | ||
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS) For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 | TOSHIBA 东芝 | |||
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 | TOSHIBA 东芝 | |||
For Low Noise Audio Amplifier Applications For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 | TOSHIBA 东芝 | |||
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 | TOSHIBA 东芝 | |||
For Low Noise Audio Amplifier Applications For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 | TOSHIBA 东芝 | |||
N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) GENGERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATION Small Package High Input Impedance : IGSS= -1 nA(Max.) (VGS = -30V) Low Noise :NF =0.5dB(Typ.) (RG = 100KΩ, ㄹ = 120Hz) | TOSHIBA 东芝 | |||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | |||
MOS Field Effect Transistor Features ● Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8A) ● Avalanche capability ratings | KEXIN 科信电子 | |||
SWITCHING N-CHANNEL POWER MOSFET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP. | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15 | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15 | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP. | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP. | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15 | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15 | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP. | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 32 nC | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | |||
MOS Field Effect Transistor Features ● Low gate charge: ● QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating: ±30 V ● Low on-state resistance RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) ● Avalanche capability ratings | KEXIN 科信电子 | |||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate cha | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. | RENESAS 瑞萨 | |||
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications 文件:589.29 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications 文件:589.29 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
封装/外壳:5-TSSOP,SC-70-5,SOT-353 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:JFET DUAL N-CH USV 分立半导体产品 晶体管 - JFET | ETC 知名厂家 | ETC | ||
isc N-Channel MOSFET Transistor 文件:332.78 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:326.81 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:401.11 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:400.99 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:332.45 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:326.49 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:400.78 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:323.22 Kbytes Page:2 Pages | ISC 无锡固电 |
2SK332产品属性
- 类型
描述
- 型号
2SK332
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
SILICON N CHANNEL TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
TO-220F |
9000 |
只做原装,欢迎询价,量大价优 |
|||
NEC |
TO-220F |
6603 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA |
22+ |
SOT-353 |
30000 |
只做原装正品 |
|||
RENESAS/瑞萨 |
2020+ |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
NEC |
21+ |
T0220F |
50 |
原装现货假一赔十 |
|||
SANYO/三洋 |
23+ |
SOP-6 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
2023+ |
TO-220 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
NEC |
24+ |
NA/ |
6790 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
25+ |
TO-263 |
45000 |
NEC全新现货2SK3328-ZJ即刻询购立享优惠#长期有排单订 |
2SK332规格书下载地址
2SK332参数引脚图相关
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2SK332数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW
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