Silicon NPN triple diffusion planar type Darlington

For power amplification Complementary to 2SB1250 ■Features ● Optimum for 25W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 ■ Features ● Optimum for 35W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 ■ Features ● Optimum for 35W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON • Complement to type 2SB1252 APPLICATIONS • Power amplification • Optimum for 35W high-fidelity output

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON • Complement to type 2SB1252 APPLICATIONS • Power amplification • Optimum for 35W high-fidelity output

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1253 APPLICATIONS • Power amplification • Optimum for 40W high-fidelity output applications

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1253 APPLICATIONS • Power amplification • Optimum for 40W high-fidelity output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1254 APPLICATIONS • Power amplification • Optimum for 60W high-fidelity output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 60W HiFi output • High foward current transfer ratio • Low collector saturation voltage • Complement to type 2SB1254 APPLICATIONS • Power amplification

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 ■ Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD1894 ■Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1254 APPLICATIONS • Power amplification • Optimum for 60W high-fidelity output applications

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification • Optimum for 90W high-fidelity output applications

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification • Optimum for 90W high-fidelity output applications

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 90W HiFi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 7A ·Complement to Type 2SB1255 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applicatio

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25℃ APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25
APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications

NPN Silicon Epitaxial Planar Transistor

Description The 2SD1898 is designed for switching applications.

Epitaxial Planar NPN Transistors

Epitaxial Planar NPN Transistors P/b Lead(Pb)-Free

POWER TRANSISTOR

FEATURES * High VCEO= 80V * High IC= 1A (DC) * Good hFE linearity. * Low VCE(SAT) * Complements the 2SB1260.

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

TRANSISTOR(NPN)

FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1260 ● Low Collector-Emitter Saturation Voltage

Power Transistor

Features ● High VCEO, VCEO=80V . ● High IC, IC=1A (DC) . ● Good hFE linearity . ● Low VCE (sat) .

Power Transistor

FEATURES ● High VCEO,VCEO=80V. ● High IC,IC=1A(DC). ● Good HFE Linearity. ● Low VCE(sat). ● Complement the 2SB1260. APPLICATIONS ● NPN silicon transistor.

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

NPN-General Use Transistor

NPN-General Use Transistor 1W 1A 80V Feature Marking DF Application Can be used for switching and amplifying in various electrical and electronic circuit.

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1260 ● Low Collector-Emitter Saturation Voltage

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H ● Low Collector-Emitter Saturation Voltage

TRANSISTOR (NPN)

FEATURES ● High VCEO ● High IC ● Good hFE linearity ● Low VCE (sat)

Power Transistor(80V,1A)

FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. APPLICATIONS NPN silicon transistor.

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

Plastic-Encapsulate Transistors

FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage

Silicon NPN Power Transistor

FEATURES · Low collector saturation voltage APPLICATIONS · Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits

TO-252-2L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High Transition Frequency

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transition frequency applications

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS P/b Lead(Pb)-Free

Silicon NPN Power Transistor

FEATURES · Low collector saturation voltage APPLICATIONS · Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)