NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti

TO-252-2LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency

TO-252Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

NPNPLASTICENCAPSULATETRANSISTORS

NPNPLASTICENCAPSULATETRANSISTORS P/bLead(Pb)-Free

SiliconNPNtransistorinaTO-252PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications.

iscSiliconNPNPowerTransistor

DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：带盒（TB） 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个