Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1253 APPLICATIONS • Power amplification • Optimum for 40W high-fidelity output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1253 APPLICATIONS • Power amplification • Optimum for 40W high-fidelity output applications

Silicon NPN Power Transistors

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Silicon NPN triple diffusion planar type Darlington(For power amplification)