NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

中等功率双极型晶体管

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS P/b Lead(Pb)-Free

SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) = 0.3 VCE

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

NPN Silicon Epitaxial Transistor

Features ● Low VCE(sat). ● High hFE.