Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification • Optimum for 90W high-fidelity output applications

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 90W HiFi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification • Optimum for 90W high-fidelity output applications

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 7A ·Complement to Type 2SB1255 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applicatio

Silicon NPN Darlington Power Transistors

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Silicon NPN Darlington Power Transistors

文件：98.73 Kbytes Page：3 Pages

Silicon NPN Darlington Power Transistors

文件：98.73 Kbytes Page：3 Pages