NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS P/b Lead(Pb)-Free

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transition frequency applications

TO-252-2L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High Transition Frequency

Silicon NPN Power Transistor

FEATURES · Low collector saturation voltage APPLICATIONS · Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nA wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

晶体管

Silicon NPN Power Transistor

FEATURES · Low collector saturation voltage APPLICATIONS · Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transition frequency applications

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) = 0.3 VCE

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

NPN Silicon Epitaxial Transistor

Features ● Low VCE(sat). ● High hFE.

中等功率双极型晶体管

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：带盒（TB） 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON EPITAXIAL TRANSISTOR

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