NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS P/b Lead(Pb)-Free

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transition frequency applications

TO-252-2L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High Transition Frequency

Silicon NPN Power Transistor

FEATURES · Low collector saturation voltage APPLICATIONS · Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits

晶体管

Bipolar Power Transistors

Silicon NPN Power Transistor

FEATURES · Low collector saturation voltage APPLICATIONS · Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 60V • Operating and storage juncti

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transition frequency applications

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) = 0.3 VCE

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

NPN Silicon Epitaxial Transistor

Features ● Low VCE(sat). ● High hFE.

中等功率双极型晶体管

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：带盒（TB） 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON EPITAXIAL TRANSISTOR

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