2SD1898晶体管资料

  • 2SD1898别名:2SD1898三极管、2SD1898晶体管、2SD1898晶体三极管

  • 2SD1898生产厂家:TOY

  • 2SD1898制作材料:Si-NPN

  • 2SD1898性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SD1898封装形式:贴片封装

  • 2SD1898极限工作电压:100V

  • 2SD1898最大电流允许值:1A

  • 2SD1898最大工作频率:100MHZ

  • 2SD1898引脚数:3

  • 2SD1898最大耗散功率

  • 2SD1898放大倍数

  • 2SD1898图片代号:H-100

  • 2SD1898vtest:100

  • 2SD1898htest:100000000

  • 2SD1898atest:1

  • 2SD1898wtest:0

  • 2SD1898代换 2SD1898用什么型号代替:BCX56,2SC2881,2SC3444,2SC3646,2SD874A,2SD1005,2SD1386,2SD1418,2SD1419,

2SD1898价格

参考价格:¥0.5546

型号:2SD1898T100Q 品牌:Rohm 备注:这里有2SD1898多少钱,2025年最近7天走势,今日出价,今日竞价,2SD1898批发/采购报价,2SD1898行情走势销售排行榜,2SD1898报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SD1898

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

ROHM

罗姆

2SD1898

Epitaxial Planar NPN Transistors

Epitaxial Planar NPN Transistors P/b Lead(Pb)-Free

WEITRON

2SD1898

POWER TRANSISTOR

FEATURES * High VCEO= 80V * High IC= 1A (DC) * Good hFE linearity. * Low VCE(SAT) * Complements the 2SB1260.

UTC

友顺

2SD1898

NPN Silicon Epitaxial Planar Transistor

Description The 2SD1898 is designed for switching applications.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD1898

Power Transistor

Features ● High VCEO, VCEO=80V . ● High IC, IC=1A (DC) . ● Good hFE linearity . ● Low VCE (sat) .

KEXIN

科信电子

2SD1898

TRANSISTOR(NPN)

FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1260 ● Low Collector-Emitter Saturation Voltage

HTSEMI

金誉半导体

2SD1898

Power Transistor

FEATURES ● High VCEO,VCEO=80V. ● High IC,IC=1A(DC). ● Good HFE Linearity. ● Low VCE(sat). ● Complement the 2SB1260. APPLICATIONS ● NPN silicon transistor.

BILIN

银河微电

2SD1898

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

YFWDIODE

佑风微电子

2SD1898

NPN-General Use Transistor

NPN-General Use Transistor 1W 1A 80V Feature Marking DF Application Can be used for switching and amplifying in various electrical and electronic circuit.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SD1898

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

ROHM

罗姆

2SD1898

TRANSISTOR (NPN)

FEATURES ● High VCEO ● High IC ● Good hFE linearity ● Low VCE (sat)

WINNERJOIN

永而佳

2SD1898

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1260 ● Low Collector-Emitter Saturation Voltage

JIANGSU

长电科技

2SD1898

Power Transistor(80V,1A)

FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. APPLICATIONS NPN silicon transistor.

DGNJDZ

南晶电子

2SD1898

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H ● Low Collector-Emitter Saturation Voltage

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

2SD1898

POWER TRANSISTOR

文件:126.02 Kbytes Page:2 Pages

UTC

友顺

2SD1898

Power Transistor (80V, 1A)

文件:96.42 Kbytes Page:5 Pages

ROHM

罗姆

2SD1898

Power Transistor

文件:163.94 Kbytes Page:4 Pages

ROHM

罗姆

2SD1898

Power Transistor (80V, 1A)

文件:120.9 Kbytes Page:4 Pages

ROHM

罗姆

2SD1898

Power Transistor (80V, 1A)

文件:177.89 Kbytes Page:4 Pages

ROHM

罗姆

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

COMCHIP

典琦

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

美微科

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

COMCHIP

典琦

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

美微科

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

YFWDIODE

佑风微电子

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

COMCHIP

典琦

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

YFWDIODE

佑风微电子

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

美微科

General Purpose Transistor

Features - High VCEO, VCEO=80. - High IC, IC=1A(DC). - Good HFE linearity. - Low VCE(sat).

COMCHIP

典琦

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

ROHM

罗姆

Plastic-Encapsulate Transistors

FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage

GWSEMI

唯圣电子

Power Transistor (80V, 1A)

文件:177.89 Kbytes Page:4 Pages

ROHM

罗姆

Power Transistor (80V, 1A)

文件:96.42 Kbytes Page:5 Pages

ROHM

罗姆

Power Transistor (80V, 1A)

文件:120.9 Kbytes Page:4 Pages

ROHM

罗姆

Power Transistor

文件:163.94 Kbytes Page:4 Pages

ROHM

罗姆

POWER TRANSISTOR

文件:126.02 Kbytes Page:2 Pages

UTC

友顺

Epitaxial Planar Transistor

文件:421.87 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN Transistors

文件:633 Kbytes Page:2 Pages

KEXIN

科信电子

POWER TRANSISTOR

文件:126.02 Kbytes Page:2 Pages

UTC

友顺

POWER TRANSISTOR

文件:126.02 Kbytes Page:2 Pages

UTC

友顺

NPN Silicon Power Transistors

文件:325.49 Kbytes Page:2 Pages

MCC

美微科

NPN Silicon Power Transistors

文件:325.49 Kbytes Page:2 Pages

MCC

美微科

NPN Transistors

文件:633 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Silicon Power Transistors

文件:325.49 Kbytes Page:2 Pages

MCC

美微科

NPN Silicon Power Transistors

文件:325.49 Kbytes Page:2 Pages

MCC

美微科

NPN Transistors

文件:633 Kbytes Page:2 Pages

KEXIN

科信电子

Sample Program (Remote Control Transmission/Reception)

文件:538.12 Kbytes Page:18 Pages

RENESAS

瑞萨

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

2SD1898产品属性

  • 类型

    描述

  • 型号

    2SD1898

  • 制造商

    ROHM Semiconductor

更新时间:2025-8-18 12:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
长电/长晶
2021
SOT-89-3L
78000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC
2432
SOT-89
28005
原装现货17377264928微信同号
CJ
ROHS+Original
NA
15230
专业电子元器件供应链/QQ 350053121 /正纳电子
罗姆
21+
TO-89
6000
全新原装
Rohm(罗姆)
24+
SOT-89
8348
原厂可订货,技术支持,直接渠道。可签保供合同
ROHM/罗姆
24+
SOT-89
84119
原厂授权代理 价格绝对优势
ROHM/罗姆
23+
SOT-89
12500
全新原装现货热卖,价格优势
ROHM
25+
SOT89
12588
原装正品,量大可定
ROHM/罗姆
25+
SOT-89
32000
ROHM/罗姆全新特价2SD1898T100Q即刻询购立享优惠#长期有货
ROHM/罗姆
21+
SOT-89
138359
只做原装,假一罚十

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