Plastic-Encapsulate Transistors

FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

Epitaxial Planar NPN Transistors

Epitaxial Planar NPN Transistors P/b Lead(Pb)-Free

POWER TRANSISTOR

FEATURES * High VCEO= 80V * High IC= 1A (DC) * Good hFE linearity. * Low VCE(SAT) * Complements the 2SB1260.

NPN Silicon Epitaxial Planar Transistor

Description The 2SD1898 is designed for switching applications.

Power Transistor (80V, 1A)

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