Plastic-Encapsulate Transistors

FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage

NPN小信号三极管

POWER TRANSISTOR

FEATURES * High VCEO= 80V * High IC= 1A (DC) * Good hFE linearity. * Low VCE(SAT) * Complements the 2SB1260.

Epitaxial Planar NPN Transistors

Epitaxial Planar NPN Transistors P/b Lead(Pb)-Free

丝印代码：DF；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

NPN Silicon Epitaxial Planar Transistor

Description The 2SD1898 is designed for switching applications.

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1