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位置：首页 > IC中文资料第6838页 > 2SB90

2SB90晶体管资料

  • 2SB90别名：2SB90三极管、2SB90晶体管、2SB90晶体三极管

  • 2SB90生产厂家：日本东芝公司

  • 2SB90制作材料：Ge-PNP

  • 2SB90性质：低频或音频放大 （LF）

  • 2SB90封装形式：直插封装

  • 2SB90极限工作电压：18V

  • 2SB90最大电流允许值：0.005A

  • 2SB90最大工作频率：<1MHZ或未知

  • 2SB90引脚数：3

  • 2SB90最大耗散功率：0.04W

  • 2SB90放大倍数：

  • 2SB90图片代号：C-47

  • 2SB90vtest：18

  • 2SB90htest：999900

  • 2SB90atest：0.005

  • 2SB90wtest：0.04

  • 2SB90代换 2SB90用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX51A,

2SB90价格

参考价格：￥3.4391

型号：2SB906-Y(TE16L1,NQ 品牌：Toshiba Semiconductor an 备注：这里有2SB90多少钱，2025年最近7天走势，今日出价，今日竞价，2SB90批发/采购报价，2SB90行情走势销售排行榜，2SB90报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SB900

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Lowcollectorsaturationvoltage ·Wideareaofsafeoperation APPLICATIONS ·Forpoweramplifierandswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB900

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Lowcollectorsaturationvoltage ·Wideareaofsafeoperation APPLICATIONS ·Forpoweramplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB902

SiPNPEPITAXIALPLANAR

SiPNPEpitaxialPlanar

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB902P

SiPNPEPITAXIALPLANAR

SiPNPEpitaxialPlanar

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB902Q

SiPNPEPITAXIALPLANAR

SiPNPEpitaxialPlanar

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB902R

SiPNPEPITAXIALPLANAR

SiPNPEpitaxialPlanar

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB902S

SiPNPEPITAXIALPLANAR

SiPNPEpitaxialPlanar

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB902T

SiPNPEPITAXIALPLANAR

SiPNPEpitaxialPlanar

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB903

30V/12AHigh-SpeedSwitchingApplications

30V/12AHigh-SpeedSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage: VCE(sat)=(–)0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Suitableforrelaydrivers,high-speedinverters, converters,andothergenerallarge-currentswitching

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SB903

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Lowcollectorsaturationvoltage •Largecurrentcapacity. •Complementtotype2SD1212 APPLICATIONS •Suitableforrelaydrivers,high-speed inverters,converters,andothergenral largecurrentswitchingapplications. •High-speedswitchingappli

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB903

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Lowcollectorsaturationvoltage •Largecurrentcapacity. •Complementtotype2SD1212 APPLICATIONS •Suitableforrelaydrivers,high-speed inverters,converters,andothergenral largecurrentswitchingapplications. •High-speedswitchingappli

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB903

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Lowcollectorsaturationvoltage •Largecurrentcapacity. •Complementtotype2SD1212 APPLICATIONS •Suitableforrelaydrivers,high-speed inverters,converters,andothergenral largecurrentswitchingapplications. •High-speedswitchingappli

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SB904

30V/20AHigh-SpeedSwitchingApplications

30V/12AHigh-SpeedSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SB905

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •ComplementarytoSD1220

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB905

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB905

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-150V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB905

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-150V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB905-251

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-150V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB905-252

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-150V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB906

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB906

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB906

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906

TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS)

AudioFrequencyPowerAmplifierApplication •Lowcollectorsaturationvoltage:VCE(sat)=−1.0V(typ.)(IC=−3A,IB=−0.3A) •Highpowerdissipation:PC=20W(Tc=25°C) •Complementaryto2SD1221

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906

SiliconPNPEpitaxial

■Features ●Lowcollectorsaturationvoltage ●Highpowerdissipation:PC=20W(Tc=25°C) ●Complementaryto2SD1221

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SB906-251

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB906-252

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB907

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB907

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB907

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB907

TRANSISTOR(SWITCHING,HANNERDRIVE,PULSEMOTORDRIVE,POWERAMPLIFIERAPPLICATIONS)

SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications •HighDCcurrentgain:hFE(1)=2000(min)(VCE=−2V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−2A) •Complementaryto2SD1222.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB907-251

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB907-252

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB908

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB908

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Complementaryto2SD1223 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB908

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Complementaryto2SD1223 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB908

TRANSISTOR(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVE,POWERAMPLIFIERAPPLICATIONS)

SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications •HighDCcurrentgain:hFE(1)=2000(min)(VCE=−2V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−3A) •Complementaryto2SD1223

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB908-251

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Complementaryto2SD1223 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB908-252

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Complementaryto2SD1223 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB900

SiliconPNPPowerTransistors

文件：88.64 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB901

SiliconPNPPowerTransistor

文件：254.19 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB903

SiliconPNPPowerTransistors

文件：162.5 Kbytes Page：4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB903

SiliconPNPPowerTransistor

文件：129.09 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB903_15

SiliconPNPPowerTransistors

文件：224.46 Kbytes Page：4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SB903_2014

SiliconPNPPowerTransistors

文件：224.46 Kbytes Page：4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SB904

SiliconPNPPowerTransistors

文件：149.98 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB904

SiliconPNPPowerTransistors

文件：148.35 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB904

SiliconPNPPowerTransistors

文件：167.79 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB905

PowerAmplifierApplications

文件：157.62 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB905

PowerAmplifierApplications

文件：154.8 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB905_07

PowerAmplifierApplications

文件：154.8 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB905_10

PowerAmplifierApplications

文件：157.62 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906

AudioFrequencyPowerAmplifierApplication

文件：160.7 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906

AudioFrequencyPowerAmplifierApplication

文件：164.49 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906_07

AudioFrequencyPowerAmplifierApplication

文件：160.7 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906_10

AudioFrequencyPowerAmplifierApplication

文件：164.49 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB906_15

PNPTransistors

文件：1.34188 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SB906-O

PNPTransistors

文件：1.34188 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SB906-Y(TE16L1,NQ

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 3A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SB907

SwitchingApplicationsHammerDrive,PulseMotorDriveApplicationsPowerAmplifierApplications

文件：169.83 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SB907

SwitchingApplicationsHammerDrive,PulseMotorDriveApplicationsPowerAmplifierApplications

文件：165.76 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SB90产品属性

  • 类型

    描述

  • 型号

    2SB90

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    Silicon PNP Power Transistors

2SB90供应商更多...

更新时间：2025-6-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SB907
TOSHIBA/东芝
24+
NA/
1727
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市金芯世纪电子有限公司
2SB907
TOSHIBA/东芝
22+
SOT252
100000
代理渠道/只做原装/可含税
询价
深圳市汇莱威科技有限公司
2SB907(TE16L1,NQ)
TOSHIBA/东芝
2024
252-251
503502
16余年资质 绝对原盒原盘代理渠道 更多数量
询价
深圳市一线半导体有限公司
2SB907
TOSHIBA
24+
TO-252
11400
新进库存/原装
询价
标准国际(香港)有限公司
2SB907(TE16L)
TOSHIBA
NDC
700
公司优势库存 热卖中!
询价
深圳市创新迹电子有限公司
2SB907
TOSHIBA/东芝
2022+
-
48000
只做原装,原装,假一罚十
询价
艾睿国际（香港）有限公司
2SB907
TOSHIBA/东芝
2447
TO-251
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市莱克讯科技有限公司
2SB907
TOSHIBA
1922+
TO-251
9200
公司原装现货假一罚十特价欢迎来电咨询
询价
深圳市威雅利发展有限公司
2SB907
TOSHIBA
18+
SOT252
408
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市博浩通科技有限公司
2SB907
NULL
23+
TO-252
6000
专业优势供应
询价

2SB90芯片相关品牌

  • ALLEN-BRADLEY
  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • Vicor
  • WALL

2SB90规格书下载地址

2SB90参数引脚图相关

2SB90数据表相关新闻

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