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2SB90晶体管资料

2SB90别名：2SB90三极管、2SB90晶体管、2SB90晶体三极管
2SB90生产厂家：日本东芝公司
2SB90制作材料：Ge-PNP
2SB90性质：低频或音频放大（LF）
2SB90封装形式：直插封装
2SB90极限工作电压：18V
2SB90最大电流允许值：0.005A
2SB90最大工作频率：<1MHZ或未知
2SB90引脚数：3
2SB90最大耗散功率：0.04W
2SB90放大倍数：
2SB90图片代号：C-47
2SB90vtest：18
2SB90htest：999900
2SB90atest：0.005
2SB90wtest：0.04

2SB90代换 2SB90用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX51A,

2SB90价格

参考价格：￥3.4391

型号：2SB906-Y(TE16L1,NQ 品牌：Toshiba Semiconductor an 备注：这里有2SB90多少钱，2026年最近7天走势，今日出价，今日竞价，2SB90批发/采购报价，2SB90行情走势销售排行榜，2SB90报价。

型号	功能描述	生产厂家企业	LOGO
2SB900	Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	ISC 无锡固电	ISC
2SB900	Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	SAVANTIC	SAVANTIC
2SB902	Si PNP EPITAXIAL PLANAR Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB902P	Si PNP EPITAXIAL PLANAR Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB902Q	Si PNP EPITAXIAL PLANAR Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB902R	Si PNP EPITAXIAL PLANAR Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB902S	Si PNP EPITAXIAL PLANAR Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB902T	Si PNP EPITAXIAL PLANAR Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB903	30V/12A High-Speed Switching Applications 30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching	SANYO 三洋	SANYO
2SB903	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity. • Complement to type 2SD1212 APPLICATIONS • Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. • High-speed switching appli	ISC 无锡固电	ISC
2SB903	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity. • Complement to type 2SD1212 APPLICATIONS • Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. • High-speed switching appli	JMNIC 锦美电子	JMNIC
2SB903	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity. • Complement to type 2SD1212 APPLICATIONS • Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. • High-speed switching appli	SAVANTIC	SAVANTIC
2SB904	30V/20A High-Speed Switching Applications 30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Large current switching of relay drivers, high-speed inverters, converters.	SANYO 三洋	SANYO
2SB905	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • Complementary to SD1220	TOSHIBA 东芝	TOSHIBA
2SB905	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SB905	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB905	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB905-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB905-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB906	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB906	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB906	Silicon PNP Epitaxial ■ Features ● Low collector saturation voltage ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SD1221	KEXIN 科信电子	KEXIN
2SB906	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SB906	TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Audio Frequency Power Amplifier Application • Low collector saturation voltage : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221	TOSHIBA 东芝	TOSHIBA
2SB906-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB906-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB907	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB907	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB907	TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) • Complementary to 2SD1222.	TOSHIBA 东芝	TOSHIBA
2SB907	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SB907-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB907-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB908	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB908	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB908	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SB908	TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD1223	TOSHIBA 东芝	TOSHIBA
2SB908-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB908-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SB900	Silicon PNP Power Transistors 文件：88.64 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB901	Silicon PNP Power Transistor 文件：254.19 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SB902R	Si PNP Epitaxial Planar	PANASONIC 松下	PANASONIC
2SB903	Silicon PNP Power Transistors 文件：162.5 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB903	30V/12A High-Speed Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SB903	Silicon PNP Power Transistor 文件：129.09 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB903_15	Silicon PNP Power Transistors 文件：224.46 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB903_2014	Silicon PNP Power Transistors 文件：224.46 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB904	PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SB904	Silicon PNP Power Transistors 文件：148.35 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB904	Silicon PNP Power Transistors 文件：149.98 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB904	Silicon PNP Power Transistors 文件：167.79 Kbytes Page：3 Pages	ISC 无锡固电	ISC
2SB905	Power Amplifier Applications 文件：157.62 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB905	Power Amplifier Applications 文件：154.8 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB905_07	Power Amplifier Applications 文件：154.8 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB905_10	Power Amplifier Applications 文件：157.62 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB906	Audio Frequency Power Amplifier Application 文件：164.49 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB906	Audio Frequency Power Amplifier Application 文件：160.7 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB906_07	Audio Frequency Power Amplifier Application 文件：160.7 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB906_10	Audio Frequency Power Amplifier Application 文件：164.49 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB906_15	PNP Transistors 文件：1.34188 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB906-O	PNP Transistors 文件：1.34188 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB90产品属性

类型
描述
Polarity：
PNP
VCEO(Max)(V)：
-60
IC(Max)(A)：
-3
hFE(Min)：
60
hFE(Max)：
200
VCE(sat)(Max)(V)：
-1.7
fT(Typ.)(MHz)：
9
ComplementaryProduct：
2SD1221
Comments：
Rank is specified by hFE range.
Number of pins：
3
Surface mount package：
Y
Package name：
New PW-Mold
Width×Length×Height(mm)：
6.5 x 9.5 x 2.3

2SB90供应商更多...

更新时间：2026-5-14 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SB903	TOSHIBA/东芝	2026+	TO220	54648	百分百原装现货实单必成欢迎询价	询价
深圳市昌和盛利电子有限公司	2SB905	TOSHIBA	26+	TO-252	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市豪迈兴电子有限公司	2SB903	sanyo	24+	TO-220	8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市华斯顿科技有限公司	2SB905-O	Toshiba	25+23+	To-252	28171	绝对原装正品全新进口深圳现货	询价
深圳市拓亿芯电子有限公司	2SB905-O	TOSHIBA/东芝	25+	SOT252	9800	全新原装现货,假一赔十	询价
深圳市创新迹电子有限公司	2SB905-O	TOSHIBA	22+	SOT252	20000	公司只有原装品质保证	询价
上海金庆电子技术有限公司	2SB905-O	TOSHIBA	0906+	TO-251	1490	全新发货1-2天	询价
深圳市一线半导体有限公司	2SB903		24+	TO-220	10000	全新	询价
洪芯国际半导体（深圳）有限公司	2SB905-O	TOSHIBA	26+	QFN	86720	全新原装正品价格最实惠假一赔百	询价
深圳市赛美科科技有限公司	2SB903R	SANYO		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价

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DdatasheetPDF页码索引

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2SB90晶体管资料

2SB90价格

2SB90产品属性

2SB90供应商更多...

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2SB90规格书下载地址

2SB90参数引脚图相关

2SB90数据表相关新闻

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2SC2334中文资料

DdatasheetPDF页码索引