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2SB908晶体管资料
2SB908别名：2SB908三极管、2SB908晶体管、2SB908晶体三极管
2SB908生产厂家：日本东芝公司
2SB908制作材料：Si-P+Darl+Di
2SB908性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB908封装形式：直插封装
2SB908极限工作电压：100V
2SB908最大电流允许值：4A
2SB908最大工作频率：<1MHZ或未知
2SB908引脚数：3
2SB908最大耗散功率：15W
2SB908放大倍数：β=5000
2SB908图片代号：A-80
2SB908vtest：100
2SB908htest：999900
- 2SB908atest：4
2SB908wtest：15
2SB908代换 2SB908用什么型号代替：2SB942A,2SB1072,BD902,BDW24C,BDW54C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB908 | TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD1223 | TOSHIBA 东芝 |   | |
2SB908 | Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | |
2SB908 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SB908 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SB908 | Power transistor for low frequency applications | TOSHIBA 东芝 | | |
2SB908 | Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications 文件：167.3 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
2SB908 | Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications 文件：171.84 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications 文件：167.3 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications 文件：171.84 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
2SB908产品属性
- 类型
描述
- 型号
2SB908
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
TRANSISTOR(SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
3530 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
24+ |
252-251 |
503501 |
免费送样原盒原包现货一手渠道联系 |
|||
Toshiba |
25+23+ |
To-252 |
32986 |
绝对原装正品全新进口深圳现货 |
|||
TOSHIBA |
24+ |
TO-252 |
6916 |
新进库存/原装 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA(东芝) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
TOSHIBA/东芝 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TOSHIBA/东芝 |
2450+ |
SOT252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
TOS |
1922+ |
SOT252 |
3000 |
绝对进口原装现货 |
2SB908规格书下载地址
2SB908参数引脚图相关
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2SB908数据表相关新闻
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2019-2-18
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