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2SB908晶体管资料

  • 2SB908别名:2SB908三极管、2SB908晶体管、2SB908晶体三极管

  • 2SB908生产厂家:日本东芝公司

  • 2SB908制作材料:Si-P+Darl+Di

  • 2SB908性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB908封装形式:直插封装

  • 2SB908极限工作电压:100V

  • 2SB908最大电流允许值:4A

  • 2SB908最大工作频率:<1MHZ或未知

  • 2SB908引脚数:3

  • 2SB908最大耗散功率:15W

  • 2SB908放大倍数:β=5000

  • 2SB908图片代号:A-80

  • 2SB908vtest:100

  • 2SB908htest:999900

  • 2SB908atest:4

  • 2SB908wtest:15

  • 2SB908代换 2SB908用什么型号代替:2SB942A,2SB1072,BD902,BDW24C,BDW54C,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB908

TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD1223

TOSHIBA

东芝

2SB908

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SB908

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB908

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB908

Power transistor for low frequency applications

Feature:Darlington / Built-in damper diode\nApplication Scope:Switching / Power amplifier\nPolarity:PNP\nComplementary Product:2SD1223\nRoHS Compatible Product(s) (#):Available Collector Current IC -4 A \nCollector power dissipation PC 15 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -80 V ;

TOSHIBA

东芝

2SB908

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:167.3 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB908

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:171.84 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:167.3 Kbytes Page:5 Pages

TOSHIBA

东芝

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:171.84 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB908产品属性

  • 类型

    描述

  • Product Category:

    Power transistor for low frequency applications

  • Package name(Toshiba):

    PW-Mold

更新时间:2026-5-15 9:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
25+
TO-251
9270
普通
TOSHIBA
24+
SOT252
8000
新到现货,只做全新原装正品
TOSHIBA
24+/25+
2000
原装正品现货库存价优
UTG
25+
TO-252
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
TOSHIBA/东芝
25+
TO-252251
45000
TOSHIBA/东芝全新现货2SB908即刻询购立享优惠#长期有排单订
1415+
TO-252
28500
全新原装正品,优势热卖
TOS
23+
SOT252
3000
原装正品假一罚百!可开增票!
TOSHIBA/东芝
25+
252-251
90000
全新原装现货
TOSHIBA
23+
TO-252
50000
全新原装正品现货,支持订货

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