2SB907晶体管资料

  • 2SB907别名:2SB907三极管、2SB907晶体管、2SB907晶体三极管

  • 2SB907生产厂家:日本东芝公司

  • 2SB907制作材料:Si-P+Darl+Di

  • 2SB907性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB907封装形式:直插封装

  • 2SB907极限工作电压:60V

  • 2SB907最大电流允许值:3A

  • 2SB907最大工作频率:<1MHZ或未知

  • 2SB907引脚数:3

  • 2SB907最大耗散功率:15W

  • 2SB907放大倍数:β=5000

  • 2SB907图片代号:A-80

  • 2SB907vtest:60

  • 2SB907htest:999900

  • 2SB907atest:3

  • 2SB907wtest:15

  • 2SB907代换 2SB907用什么型号代替:2SB1072,2SB1214,2SB1303,2SB1415,

型号 功能描述 生产厂家&企业 LOGO 操作
2SB907

TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) • Complementary to 2SD1222.

TOSHIBA

东芝

2SB907

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SB907

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB907

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB907

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:165.76 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB907

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:169.83 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:165.76 Kbytes Page:5 Pages

TOSHIBA

东芝

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:169.83 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB907产品属性

  • 类型

    描述

  • 型号

    2SB907

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

更新时间:2025-8-16 8:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
tosh
24+
500000
行业低价,代理渠道
TOSHIBA/东芝
22+
SOT252
100000
代理渠道/只做原装/可含税
TOSHIBA
21+
SOT252
408
原装现货假一赔十
TOSHIBA/东芝
24+
NA/
1727
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA
18+
SOT252
408
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA/东芝
25+
TO-252251
45000
TOSHIBA/东芝全新现货2SB907即刻询购立享优惠#长期有排单订
TOSHIBA
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA/东芝
2024
252-251
503502
16余年资质 绝对原盒原盘代理渠道 更多数量
TOS
23+
TO-251
3250
专做原装正品,假一罚百!
TOSHIBA
24+/25+
1465
原装正品现货库存价优

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