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2SB907晶体管资料

  • 2SB907别名:2SB907三极管、2SB907晶体管、2SB907晶体三极管

  • 2SB907生产厂家:日本东芝公司

  • 2SB907制作材料:Si-P+Darl+Di

  • 2SB907性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB907封装形式:直插封装

  • 2SB907极限工作电压:60V

  • 2SB907最大电流允许值:3A

  • 2SB907最大工作频率:<1MHZ或未知

  • 2SB907引脚数:3

  • 2SB907最大耗散功率:15W

  • 2SB907放大倍数:β=5000

  • 2SB907图片代号:A-80

  • 2SB907vtest:60

  • 2SB907htest:999900

  • 2SB907atest:3

  • 2SB907wtest:15

  • 2SB907代换 2SB907用什么型号代替:2SB1072,2SB1214,2SB1303,2SB1415,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB907

TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) • Complementary to 2SD1222.

TOSHIBA

东芝

2SB907

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SB907

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB907

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB907

Power transistor for low frequency applications

Feature:Darlington / Built-in damper diode\nApplication Scope:Switching / Power amplifier\nPolarity:PNP\nComplementary Product:2SD1222\nRoHS Compatible Product(s) (#):Available Collector Current IC -3 A \nCollector power dissipation PC 15 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -40 V ;

TOSHIBA

东芝

2SB907

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:165.76 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB907

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:169.83 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:165.76 Kbytes Page:5 Pages

TOSHIBA

东芝

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:169.83 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB907产品属性

  • 类型

    描述

  • Product Category:

    Power transistor for low frequency applications

  • Package name(Toshiba):

    PW-Mold

更新时间:2026-5-15 19:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CHENMKO
22+
SOT23
20000
公司只有原装 品质保证
TOSHIBA/东芝
25+
TO-252251
45000
TOSHIBA/东芝全新现货2SB907即刻询购立享优惠#长期有排单订
TOS
23+
TO-251
3250
专做原装正品,假一罚百!
TOSHIBA
25+
700
公司优势库存 热卖中!
TOSHIBA
18+
SOT252
408
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CHENMKO
2450+
SOT23
6885
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA
26+
TO-252
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TOSHIBA
24+
TO-252
11400
新进库存/原装
TOSHIBA
2020+
252-251
2512
全新 发货1-2天
Toshiba
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百

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