2SB907晶体管资料

  • 2SB907别名:2SB907三极管、2SB907晶体管、2SB907晶体三极管

  • 2SB907生产厂家:日本东芝公司

  • 2SB907制作材料:Si-P+Darl+Di

  • 2SB907性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB907封装形式:直插封装

  • 2SB907极限工作电压:60V

  • 2SB907最大电流允许值:3A

  • 2SB907最大工作频率:<1MHZ或未知

  • 2SB907引脚数:3

  • 2SB907最大耗散功率:15W

  • 2SB907放大倍数:β=5000

  • 2SB907图片代号:A-80

  • 2SB907vtest:60

  • 2SB907htest:999900

  • 2SB907atest:3

  • 2SB907wtest:15

  • 2SB907代换 2SB907用什么型号代替:2SB1072,2SB1214,2SB1303,2SB1415,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB907

TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) • Complementary to 2SD1222.

TOSHIBA

东芝

2SB907

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SB907

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB907

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB907

Power transistor for low frequency applications

TOSHIBA

东芝

2SB907

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:165.76 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB907

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:169.83 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:165.76 Kbytes Page:5 Pages

TOSHIBA

东芝

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件:169.83 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB907产品属性

  • 类型

    描述

  • 型号

    2SB907

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

更新时间:2025-10-6 15:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
2024
252-251
503502
16余年资质 绝对原盒原盘代理渠道 更多数量
TOSHIBA
2023+
TO-252
50000
原装现货
TOSHIBA/东芝
2447
TO-251
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TOSHIBA
NEW
TO-252
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TOSHIBA
24+/25+
1465
原装正品现货库存价优
TOSHIBA
1922+
TO-251
9200
公司原装现货假一罚十特价欢迎来电咨询
TOSHIBA
24+
TO-252
11400
新进库存/原装
TOSHIBA/东芝
25+
TO-252251
45000
TOSHIBA/东芝全新现货2SB907即刻询购立享优惠#长期有排单订
UTG
25+
TO-252
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
TOSHIBA
18+
SOT252
408
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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