2SB905晶体管资料

  • 2SB905别名:2SB905三极管、2SB905晶体管、2SB905晶体三极管

  • 2SB905生产厂家:日本东芝公司

  • 2SB905制作材料:Si-PNP

  • 2SB905性质:电视 (TV)_低频或音频放大 (LF)_输出极 (E)

  • 2SB905封装形式:直插封装

  • 2SB905极限工作电压:150V

  • 2SB905最大电流允许值:1.5A

  • 2SB905最大工作频率:50MHZ

  • 2SB905引脚数:3

  • 2SB905最大耗散功率:10W

  • 2SB905放大倍数

  • 2SB905图片代号:A-80

  • 2SB905vtest:150

  • 2SB905htest:50000000

  • 2SB905atest:1.5

  • 2SB905wtest:10

  • 2SB905代换 2SB905用什么型号代替:2SA1225,2SA1552,2SB768,2SB840,2SB841,2SB842,2SB1414,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB905

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Complementary to SD1220

TOSHIBA

东芝

2SB905

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SB905

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB905

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB905

Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications

TOSHIBA

东芝

2SB905

Power Amplifier Applications

文件:154.8 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB905

Power Amplifier Applications

文件:157.62 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Power Amplifier Applications

文件:154.8 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications

文件:157.62 Kbytes Page:5 Pages

TOSHIBA

东芝

2SB905产品属性

  • 类型

    描述

  • 型号

    2SB905

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    TRANSISTOR(POWER AMPLIFIER APPLICATIONS)

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
3440
原装现货,当天可交货,原型号开票
TOSHIBA
01+
SOT252
190
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA/东芝
25+
TO-252251
45000
TOSHIBA/东芝全新现货2SB905即刻询购立享优惠#长期有排单订
TOSHIBA/东芝
22+
SOT252
100000
代理渠道/只做原装/可含税
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
24+/25+
1760
原装正品现货库存价优
TOSHIBA
712
TO-252
1400
优势
TOSHIBA/东芝
23+
SOT252
9800
全新原装现货,假一赔十
Toshiba
25+23+
To-252
28171
绝对原装正品全新进口深圳现货
TOSHIBA
24+
TO-252
36800

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