位置:首页 > IC中文资料第446页 > 2SB1386
2SB1386晶体管资料
2SB1386别名:2SB1386三极管、2SB1386晶体管、2SB1386晶体三极管
2SB1386生产厂家:TOY
2SB1386制作材料:Si-PNP
2SB1386性质:表面帖装型 (SMD)
2SB1386封装形式:直插封装
2SB1386极限工作电压:30V
2SB1386最大电流允许值:5A
2SB1386最大工作频率:120MHZ
2SB1386引脚数:3
2SB1386最大耗散功率:0.75W
2SB1386放大倍数:
2SB1386图片代号:H-100
2SB1386vtest:30
2SB1386htest:120000000
- 2SB1386atest:5
2SB1386wtest:.75
2SB1386代换 2SB1386用什么型号代替:2SB1302,2SB1308,
2SB1386价格
参考价格:¥0.7403
型号:2SB1386T100Q 品牌:Rohm 备注:这里有2SB1386多少钱,2024年最近7天走势,今日出价,今日竞价,2SB1386批发/采购报价,2SB1386行情走势销售排行榜,2SB1386报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SB1386 | LowFrequencyTransistor(-20V,-5A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ||
2SB1386 | EpitaxialPlanarTransistorPNPSilicon EpitaxialPlanarTransistor PNPSilicon | WEITRONWEITRON 威堂電子科技 | ||
2SB1386 | LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
2SB1386 | LowFrequencyTransistor Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
2SB1386 | PNPSiliconLowFrequencyTransistor FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics ●Complementsthe2SD2098 | SECOS SeCoS Halbleitertechnologie GmbH | ||
2SB1386 | TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage, ●Execllentcurrent-to-gaincharacteristics | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
2SB1386 | SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
2SB1386 | Plastic-EncapsulateTransistors FEATURES •Lowcollectorsaturationvoltage, •Execllentcurrent-to-gaincharacteristics | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
2SB1386 | SOT-89Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | ||
2SB1386 | SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgain,complementsthe2SD2098. Applications Generalpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2SB1386 | Lowcollectorsaturationvoltage FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
2SB1386 | PNPTransistors Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2SB1386 | PNPSiliconEpitaxialPlanarTransistor FEATURES ●LowVCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ●ExcellentDCcurrentgaincharacteristics. ●Complementary:2SD2098. APPLICATIONS ●Lowfrequencytransistor. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
2SB1386 | PNPSiliconEpitaxialPlanarTransistor FEATURES LowVCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ExcellentDCcurrentgaincharacteristics. Complementary:2SD2098. APPLICATIONS Lowfrequencytransistor. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SB1386 | SOT-89-3LPlastic-EncapsulateTransistors FEATURES Lowcollectorsaturationvoltage Execllentcurrent-to-gaincharacteristics | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SB1386 | PNPSiliconLowFrequencyTransistor 文件:512.83 Kbytes Page:3 Pages | SECOS SeCoS Halbleitertechnologie GmbH | ||
2SB1386 | LOWFREQUENCYPNPTRANSISTOR 文件:178.8 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
2SB1386 | Lowfrequencytransistor(−20V,−5A) 文件:139.65 Kbytes Page:5 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ||
SOT-89-3LPlastic-EncapsulateTransistors FEATURES Lowcollectorsaturationvoltage Execllentcurrent-to-gaincharacteristics | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPTransistors Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PNPSiliconEpitaxialTransistors Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPEpitaxialTransistor VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(DPAK) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash. | CHENMKOCHENMKO CHENMKO | |||
PNPEpitaxialTransistor VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *PC=2.0W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash | CHENMKOCHENMKO CHENMKO | |||
PNPSiliconEpitaxialTransistors Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPTransistors Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPSiliconEpitaxialTransistors Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPTransistors Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
Lowfrequencytransistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencytransistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPEPITAXIALPLANARTRANSISTOR 文件:232.23 Kbytes Page:4 Pages | WEITRONWEITRON 威堂電子科技 | |||
Lowfrequencytransistor(−20V,−5A) 文件:139.65 Kbytes Page:5 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
LOWFREQUENCYPNPTRANSISTOR 文件:178.8 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPSiliconLowFrequencyTransistor 文件:512.83 Kbytes Page:3 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
PNPTransistors 文件:1.51198 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR 文件:215.22 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPSiliconLowFrequencyTransistor 文件:512.83 Kbytes Page:3 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
LOWFREQUENCYPNPTRANSISTOR 文件:215.22 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR 文件:178.8 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPTRANSISTOR 文件:178.8 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPSiliconEpitaxialTransistors 文件:430.6 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 |
2SB1386产品属性
- 类型
描述
- 型号
2SB1386
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC(友顺) |
24+ |
SOT-89 |
5000 |
诚信服务,绝对原装原盘。 |
|||
ROHM |
20+ |
SOT89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
ROHM |
23+ |
SOT-89 |
46000 |
全新原装现货 |
|||
UTC |
2016+ |
SOT89 |
29490 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ROHM/罗姆 |
21+ |
SOT89 |
48600 |
只做原装,假一罚十 |
|||
CJ |
2023+ |
SOT89 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
ROHM/罗姆 |
22+ |
SOT89 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
|||
2015+ |
200 |
公司现货库存 |
|||||
ROHM/罗姆 |
23+ |
SOT-89 |
15000 |
全新原装现货,价格优势 |
2SB1386规格书下载地址
2SB1386参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1406
- 2SB1405
- 2SB1404
- 2SB1403
- 2SB1402
- 2SB1401
- 2SB1400
- 2SB140
- 2SB14
- 2SB1399
- 2SB1398
- 2SB1397
- 2SB1396
- 2SB1395
- 2SB1394
- 2SB1393A
- 2SB1393
- 2SB1392
- 2SB1391
- 2SB1390
- 2SB138A,B
- 2SB1389
- 2SB1388
- 2SB1387
- 2SB1384
- 2SB1383
- 2SB1382
- 2SB1381
- 2SB138
- 2SB1378Q...S
- 2SB1378
- 2SB1377Q...S
- 2SB1377
- 2SB1376Q...S
- 2SB1376
- 2SB1375
- 2SB1374
- 2SB1373
- 2SB1372
- 2SB1371
- 2SB1370
- 2SB137
- 2SB136A
- 2SB1369
- 2SB1368
- 2SB1367
- 2SB1366
- 2SB1362
- 2SB1361
- 2SB1360
- 2SB1359
- 2SB1358
2SB1386数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80