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2SB1386晶体管资料

2SB1386别名：2SB1386三极管、2SB1386晶体管、2SB1386晶体三极管
2SB1386生产厂家：TOY
2SB1386制作材料：Si-PNP
2SB1386性质：表面帖装型（SMD）
2SB1386封装形式：直插封装
2SB1386极限工作电压：30V
2SB1386最大电流允许值：5A
2SB1386最大工作频率：120MHZ
2SB1386引脚数：3
2SB1386最大耗散功率：0.75W
2SB1386放大倍数：
2SB1386图片代号：H-100
2SB1386vtest：30
2SB1386htest：120000000
2SB1386atest：5
2SB1386wtest：0.75

2SB1386代换 2SB1386用什么型号代替：2SB1302,2SB1308,

2SB1386价格

参考价格：￥0.7403

型号：2SB1386T100Q 品牌：Rohm 备注：这里有2SB1386多少钱，2026年最近7天走势，今日出价，今日竞价，2SB1386批发/采购报价，2SB1386行情走势销售排行榜，2SB1386报价。

型号	功能描述	生产厂家企业	LOGO
2SB1386	丝印代码：T100；Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386	Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor PNP Silicon	WEITRON	WEITRON
2SB1386	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386	Low Frequency Transistor Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	KEXIN 科信电子	KEXIN
2SB1386	PNP Silicon Low Frequency Transistor FEATURES ● Low VCE(sat) ● Excellent DC current gain characteristics ● Complements the 2SD2098	SECOS 喜可士	SECOS
2SB1386	TRANSISTOR(PNP) FEATURES ● Low collector saturation voltage, ● Execllent current-to-gain characteristics	HTSEMI 金誉半导体	HTSEMI
2SB1386	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics	JIANGSU 长电科技	JIANGSU
2SB1386	Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics	HOTTECH 合科泰	HOTTECH
2SB1386	SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLAS 威伦电子	WILLAS
2SB1386	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent DC current gain , complements the 2SD2098. Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1386	丝印代码：BHP；Low collector saturation voltage FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics	LEIDITECH 雷卯电子	LEIDITECH
2SB1386	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386	丝印代码：BH*；PNP Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ● Excellent DC current gain characteristics. ● Complementary: 2SD2098. APPLICATIONS ● Low frequency transistor.	BILIN 银河微电	BILIN
2SB1386	丝印代码：BHP；PNP Silicon Epitaxial Planar Transistor FEATURES Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Excellent DC current gain characteristics. Complementary: 2SD2098. APPLICATIONS Low frequency transistor.	DGNJDZ 南晶电子	DGNJDZ
2SB1386	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage Execllent current-to-gain characteristics	DGNJDZ 南晶电子	DGNJDZ
2SB1386	PNP Silicon Low Frequency Transistor 文件：512.83 Kbytes Page：3 Pages	SECOS 喜可士	SECOS
2SB1386	LOW FREQUENCY PNP TRANSISTOR 文件：178.8 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1386	TRANSISTOR(PNP)	RM TECHNOLOGY	RM TECHNOLOGY
2SB1386	三极管	MTW	MTW
2SB1386	Bipolar Transistor	UTC 友顺	UTC
2SB1386_V01	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage Execllent current-to-gain characteristics	DGNJDZ 南晶电子	DGNJDZ
2SB1386L-P-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-P-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-P-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-X-AB3-F-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P	丝印代码：BHP*；PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386-P	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC	MCC
2SB1386-P-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386PPT	PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .	CHENMKO 力勤	CHENMKO
2SB1386PT	PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Strobe Flash	CHENMKO 力勤	CHENMKO
2SB1386-Q	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC	MCC
2SB1386-Q	丝印代码：BHQ*；PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386-Q-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-Q-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-Q-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC	MCC
2SB1386-R	丝印代码：BHR*；PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386-R-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386T100Q	Low frequency transistor (??0V,??A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386T100R	Low frequency transistor (??0V,??A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386-X-AB3-F-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386_05	PNP EPITAXIAL PLANAR TRANSISTOR 文件：232.23 Kbytes Page：4 Pages	WEITRON	WEITRON
2SB1386_1	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1386_10	LOW FREQUENCY PNP TRANSISTOR 文件：178.8 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386_10	PNP Silicon Low Frequency Transistor 文件：512.83 Kbytes Page：3 Pages	SECOS 喜可士	SECOS
2SB1386_15	PNP Transistors 文件：1.51198 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1386_15	LOW FREQUENCY PNP TRANSISTOR 文件：215.22 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386_15	PNP Silicon Low Frequency Transistor 文件：512.83 Kbytes Page：3 Pages	SECOS 喜可士	SECOS
2SB1386G-X-AB3-R	LOW FREQUENCY PNP TRANSISTOR 文件：215.22 Kbytes Page：5 Pages	UTC 友顺	UTC

2SB1386产品属性

类型
描述
PCM(W)：
0.5
IC(A)：
5
VCBO(V)：
30
VCEO(V)：
20
VEBO(V)：
6
hFEMin：
82
hFEMax：
390
hFE@VCE(V)：
2
hFE@IC(A)：
0.5
VCE(sat)(V)：
1
VCE(sat)\u001E@IC(A)：
4
VCE(sat)\u001E@IB(A)：
0.1
Package：
SOT-89

2SB1386供应商更多...

更新时间：2026-5-14 11:26:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市中联芯电子有限公司	2SB1386	长电	25+	SOT-89-3L	9000	只做原装正品有挂有货假一赔十	询价
洪芯国际半导体（深圳）有限公司	2SB1386	SipuSemi	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
中天科工半导体（深圳）有限公司	2SB1386T100R	ROHM/罗姆	25+	SOT-89	32000	ROHM/罗姆全新特价2SB1386T100R即刻询购立享优惠#长期有货	询价
深圳市佳鑫美电子科技有限公司	2SB1386	ROHM	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
现代芯城（深圳）科技有限公司	2SB1386		26+	N/A	48000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳诚思涵科技有限公司	2SB1386	ROHM	17+	SOT-89	60000	保证进口原装可开17%增值税发票	询价
深圳市华斯顿科技有限公司	2SB1386	ROHM	25+23+	SOT-89	14638	绝对原装正品全新进口深圳现货	询价
深圳市坤融电子科技有限公司	2SB1386GP	CHENMKO	2025+	SC-62	5000	原装进口价格优请找坤融电子!	询价
深圳市明嘉莱科技有限公司	2SB1386	ROHM/罗姆	25+	NA	880000	明嘉莱只做原装正品现货	询价
艾睿（深圳）半导体有限公司	2SB1386	CJ(江苏长电/长晶)	2447	SOT-89(SOT-89-3)	105000	1000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价

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DdatasheetPDF页码索引

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2SB1386晶体管资料

2SB1386价格

2SB1386产品属性

2SB1386供应商更多...

2SB1386芯片相关品牌

2SB1386规格书下载地址

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引