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2SB1386晶体管资料

2SB1386别名：2SB1386三极管、2SB1386晶体管、2SB1386晶体三极管
2SB1386生产厂家：TOY
2SB1386制作材料：Si-PNP
2SB1386性质：表面帖装型（SMD）
2SB1386封装形式：直插封装
2SB1386极限工作电压：30V
2SB1386最大电流允许值：5A
2SB1386最大工作频率：120MHZ
2SB1386引脚数：3
2SB1386最大耗散功率：0.75W
2SB1386放大倍数：
2SB1386图片代号：H-100
2SB1386vtest：30
2SB1386htest：120000000
2SB1386atest：5
2SB1386wtest：0.75

2SB1386代换 2SB1386用什么型号代替：2SB1302,2SB1308,

2SB1386价格

参考价格：￥0.7403

型号：2SB1386T100Q 品牌：Rohm 备注：这里有2SB1386多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1386批发/采购报价，2SB1386行情走势销售排行榜，2SB1386报价。

型号	功能描述	生产厂家&企业	LOGO
2SB1386	Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386	Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor PNP Silicon	WEITRON	WEITRON
2SB1386	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386	Low Frequency Transistor Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	KEXIN 科信电子	KEXIN
2SB1386	PNP Silicon Low Frequency Transistor FEATURES ● Low VCE(sat) ● Excellent DC current gain characteristics ● Complements the 2SD2098	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1386	TRANSISTOR(PNP) FEATURES ● Low collector saturation voltage, ● Execllent current-to-gain characteristics	HTSEMI 金誉半导体	HTSEMI
2SB1386	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics	JIANGSU 长电科技	JIANGSU
2SB1386	Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司	HOTTECH
2SB1386	SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司	WILLAS
2SB1386	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent DC current gain , complements the 2SD2098. Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1386	Low collector saturation voltage FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics	LEIDITECH 雷卯电子	LEIDITECH
2SB1386	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微电子	YFWDIODE
2SB1386	PNP Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ● Excellent DC current gain characteristics. ● Complementary: 2SD2098. APPLICATIONS ● Low frequency transistor.	BILIN 银河微电	BILIN
2SB1386	PNP Silicon Epitaxial Planar Transistor FEATURES Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Excellent DC current gain characteristics. Complementary: 2SD2098. APPLICATIONS Low frequency transistor.	DGNJDZ 南晶电子	DGNJDZ
2SB1386	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage Execllent current-to-gain characteristics	DGNJDZ 南晶电子	DGNJDZ
2SB1386	PNP Silicon Low Frequency Transistor 文件：512.83 Kbytes Page：3 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1386	LOW FREQUENCY PNP TRANSISTOR 文件：178.8 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1386_V01	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage Execllent current-to-gain characteristics	DGNJDZ 南晶电子	DGNJDZ
2SB1386L-P-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-P-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-P-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-X-AB3-F-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微电子	YFWDIODE
2SB1386-P	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC 美微科	MCC
2SB1386-P-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386PPT	PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .	CHENMKO 力勤	CHENMKO
2SB1386PT	PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Strobe Flash	CHENMKO 力勤	CHENMKO
2SB1386-Q	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC 美微科	MCC
2SB1386-Q	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微电子	YFWDIODE
2SB1386-Q-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-Q-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-Q-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC 美微科	MCC
2SB1386-R	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微电子	YFWDIODE
2SB1386-R-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386T100Q	Low frequency transistor (??0V,??A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386T100R	Low frequency transistor (??0V,??A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386-X-AB3-F-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386_05	PNP EPITAXIAL PLANAR TRANSISTOR 文件：232.23 Kbytes Page：4 Pages	WEITRON	WEITRON
2SB1386_1	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1386_10	LOW FREQUENCY PNP TRANSISTOR 文件：178.8 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386_10	PNP Silicon Low Frequency Transistor 文件：512.83 Kbytes Page：3 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1386_15	PNP Transistors 文件：1.51198 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1386_15	LOW FREQUENCY PNP TRANSISTOR 文件：215.22 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386_15	PNP Silicon Low Frequency Transistor 文件：512.83 Kbytes Page：3 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1386G-X-AB3-R	LOW FREQUENCY PNP TRANSISTOR 文件：215.22 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386G-X-AB3-R	LOW FREQUENCY PNP TRANSISTOR 文件：178.8 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386L-X-AB3-R	LOW FREQUENCY PNP TRANSISTOR 文件：178.8 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1386-P	PNP Silicon Epitaxial Transistors 文件：430.6 Kbytes Page：4 Pages	MCC 美微科	MCC

2SB1386产品属性

类型
描述
型号
2SB1386
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SB1386供应商更多...

更新时间：2025-8-6 21:09:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SB1386L-R-AB3-R	UTC	2016+	SOT89	29490	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科芯源微电子有限公司	2SB1386	CJ/长晶	23+	SOT-89	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
中天科工半导体（深圳）有限公司	2SB1386T100R	ROHM/罗姆	25+	SOT-89	32000	ROHM/罗姆全新特价2SB1386T100R即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	2SB1386	UTC	04+	SOT-89	5780	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市正纳电子有限公司	2SB1386	Rohm(罗姆)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市科恒伟业电子有限公司	2SB1386	UTC	2016+	SOT-89	6528	只做进口原装现货!假一赔十!	询价
深圳市航润创能电子集团有限公司	2SB1386T100R	ROHM/罗姆	21+	SOT89	48600	只做原装,假一罚十	询价
深圳兆威电子有限公司	2SB1386	ROHM	23+	SOT-89	999999	原装正品现货量大可订货	询价
深圳市振宏微科技有限公司	2SB1386	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市汇莱威科技有限公司	2SB1386L-R-AB3-R	UTC	2024	SOT89	58209	16余年资质绝对原盒原盘代理渠道更多数量	询价

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2SA2198，全新原装当天发货或门市自取0755-82732291.
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

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2SB1386晶体管资料

2SB1386价格

2SB1386产品属性

2SB1386供应商更多...

2SB1386芯片相关品牌

2SB1386规格书下载地址

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2SB1386数据表相关新闻

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2SA928AL-TO92NLB-Y-TG

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2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引