PNP Silicon Epitaxial Transistors

Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon

PNP Transistors

Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor

PNP Silicon Epitaxial Transistors

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PNP Transistors

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Low Frequency Transistor

Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor

Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

Epitaxial Planar Transistor PNP Silicon

Epitaxial Planar Transistor PNP Silicon

LOW FREQUENCY PNP TRANSISTOR

■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

Low frequency transistor (−20V, −5A)

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LOW FREQUENCY PNP TRANSISTOR

■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

LOW FREQUENCY PNP TRANSISTOR

■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

LOW FREQUENCY PNP TRANSISTOR

■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

PNP Silicon Epitaxial Transistors

文件：430.6 Kbytes Page：4 Pages

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 5A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个