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2SB138晶体管资料

2SB138别名：2SB138三极管、2SB138晶体管、2SB138晶体三极管
2SB138生产厂家：日本三菱公司
2SB138制作材料：Ge-PNP
2SB138性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB138封装形式：直插封装
2SB138极限工作电压：60V
2SB138最大电流允许值：5A
2SB138最大工作频率：<1MHZ或未知
2SB138引脚数：2
2SB138最大耗散功率：30W
2SB138放大倍数：
2SB138图片代号：E-44
2SB138vtest：60
2SB138htest：999900
2SB138atest：5
2SB138wtest：30

2SB138代换 2SB138用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N1539,2N1544,2SB231,3AD56A,

2SB138价格

参考价格：￥0.7403

型号：2SB1386T100Q 品牌：Rohm 备注：这里有2SB138多少钱，2025年最近7天走势，今日出价，今日竞价，2SB138批发/采购报价，2SB138行情走势销售排行榜，2SB138报价。

型号	功能描述	生产厂家企业	LOGO
2SB1381	TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A) • Complementary to 2SD2079.	TOSHIBA 东芝	TOSHIBA
2SB1381	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2079 • Low collector saturation voltage • High DC current gain APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	ISC 无锡固电	ISC
2SB1381	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2079 • Low collector saturation voltage • High DC current gain APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	JMNIC 锦美电子	JMNIC
2SB1381	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2079 • Low collector saturation voltage • High DC current gain APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1382	Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PML package • Complement to type 2SD2082 APPLICATIONS • For chopper regulator,DC motor driver and general purpose applications	SAVANTIC	SAVANTIC
2SB1382	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) B • Complement to Type 2SD2082 APPLICATIONS • Designed for chopper regula	ISC 无锡固电	ISC
2SB1382	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) B • Complement to Type 2SD2082 APPLICATIONS • Designed for chopper regula	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1382	Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose	Sanken 三垦	Sanken
2SB1383	Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose	Sanken 三垦	Sanken
2SB1383	isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V • High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) • Complement to Type 2SD2083 APPLICATIONS • Designed for driver of solenoid, motor and general purpose applications.	ISC 无锡固电	ISC
2SB1384	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1386	PNP Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ● Excellent DC current gain characteristics. ● Complementary: 2SD2098. APPLICATIONS ● Low frequency transistor.	BILIN 银河微电	BILIN
2SB1386	TRANSISTOR(PNP) FEATURES ● Low collector saturation voltage, ● Execllent current-to-gain characteristics	HTSEMI 金誉半导体	HTSEMI
2SB1386	Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor PNP Silicon	WEITRON	WEITRON
2SB1386	Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics	JIANGSU 长电科技	JIANGSU
2SB1386	Low collector saturation voltage FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics	LEIDITECH 雷卯电子	LEIDITECH
2SB1386	Low Frequency Transistor Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	KEXIN 科信电子	KEXIN
2SB1386	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386	PNP Silicon Low Frequency Transistor FEATURES ● Low VCE(sat) ● Excellent DC current gain characteristics ● Complements the 2SD2098	SECOS 喜可士	SECOS
2SB1386	PNP Silicon Epitaxial Planar Transistor FEATURES Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Excellent DC current gain characteristics. Complementary: 2SD2098. APPLICATIONS Low frequency transistor.	DGNJDZ 南晶电子	DGNJDZ
2SB1386	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage Execllent current-to-gain characteristics	DGNJDZ 南晶电子	DGNJDZ
2SB1386	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent DC current gain , complements the 2SD2098. Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1386	SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector saturation voltage ● Execllent current-to-gain characteristics ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLAS 威伦电子	WILLAS
2SB1386	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386	Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics	HOTTECH 合科泰	HOTTECH
2SB1386_V01	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage Execllent current-to-gain characteristics	DGNJDZ 南晶电子	DGNJDZ
2SB1386L-P-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-P-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-P-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-Q-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-R-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386L-X-AB3-F-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC	MCC
2SB1386-P	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386-P-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-P-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386PPT	PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .	CHENMKO 力勤	CHENMKO
2SB1386PT	PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Strobe Flash	CHENMKO 力勤	CHENMKO
2SB1386-Q	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC	MCC
2SB1386-Q	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386-Q-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-Q-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-Q-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R	PNP Silicon Epitaxial Transistors Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon	MCC	MCC
2SB1386-R	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor	YFWDIODE 佑风微	YFWDIODE
2SB1386-R-AB3-B-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R-AB3-C-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386-R-AB3-E-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1386T100Q	Low frequency transistor (??0V,??A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386T100R	Low frequency transistor (??0V,??A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1386-X-AB3-F-R	LOW FREQUENCY PNP TRANSISTOR ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1387	LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1978 Application · Low frequency power amplifier · Complementary pair with 2SD1978	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1388	Driver Applications? 2SB1388 : PNP Epitaxial Planar Silicon Transistors 2SD2093 : NPN Triple Diffused Planar Silicon Transistors Features • High DC current gain. • Large current capacity and large ASO. • Low saturation volatage. • Micaless package facilitating mounting. Applications • Motor drivers, printer ha	SANYO 三洋	SANYO
2SB1389	Silicon PNP Triple Diffused Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi

2SB138产品属性

类型
描述
型号
2SB138
制造商
Toshiba
功能描述
PNP Cut Tape

2SB138供应商更多...

更新时间：2025-12-25 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SB1390	HITACHI/日立	24+	NA/	3955	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	2SB1390	HITACHI/日立	20+	TO-220F	38900	原装优势主营型号-可开原型号增税票	询价
贸泽芯城（深圳）电子科技有限公司	2SB1387TL	HITACHI	23+	89-92	380000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市一线半导体有限公司	2SB1387	HIT	24+		90000		询价
深圳市卓越微芯电子有限公司	2SB139040ML	SILAN	25+	CDIP	4100	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市威雅利发展有限公司	2SB1391B1391	HITACHI	1932+	TO-220F	794	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	2SB1389	HITACHI	TO-220F	22+	6000	十年配单,只做原装	询价
深圳市亿智腾科技有限公司	2SB1391		24+	TO-220	6430	原装现货/欢迎来电咨询	询价
深圳市博中泰实业有限公司	2SB1390	HITACHI/日立	24+	TO-220F	60000		询价
深圳市安富世纪电子有限公司	2SB1391B1391	HITACHI	23+	TO-220F	50000	全新原装正品现货,支持订货	询价

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2SB138规格书下载地址

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2023-3-14
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2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

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2SB138晶体管资料

2SB138价格

2SB138产品属性

2SB138供应商更多...

2SB138芯片相关品牌

2SB138规格书下载地址

2SB138参数引脚图相关

2SB138数据表相关新闻

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2SA928AL-TO92NLB-Y-TG

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引