丝印代码：2N5400；TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

丝印代码：2N5400；TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

丝印代码：2N5401Z；TO-92 Plastic-Encapsulate Transistors

Features Switching and Amplification in High Voltage Applications such as Telephony Low Current High Voltage

丝印代码：2N5401Z；TO-92 Plastic-Encapsulate Transistors

Features Switching and Amplification in High Voltage Applications such as Telephony Low Current High Voltage

PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR

PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

AMPLIFIER TRANSISTOR

PNP Silicon

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

PNP Plastic Encapsulated Transistor

FEATURES ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max.600mA) ● High voltage(max.130V)

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

TRANSISTOR (PNP)

FEATURE ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.130v)

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring high voltages.

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR • Collector-Base Voltage : VCEO = 120 V • Collector Dissipation : PC(max) = 625 mW

AMPLIFIER TRANSISTOR PNP SILICON

PNP Silicon

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Amplifier Transistor

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : N

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

PNP Silicon Transistor (General purpose amplifier High voltage application)

Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO= -160V, VCEO= -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551

PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR High Voltage PNP Transistor For General Purpose And Telephony Applications.

PNP Transistors

PNP Transistors

Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v)

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier applications.

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

PNP Silicon Amplifier Transistor 625mW

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

Amplifier Transistors

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

AMPLIFIER TRANSISTOR PNP SILICON

PNP Silicon

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications.

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR ● Collector-Emitter Voltage: VCEO = 150V ● Collector Dissipation: Pc (max) = 625mW

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type 2N5551. • High Collector-Emitter Breakdown Voltage. VCEO=150V (@IC=1mA)

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

TRANSISTOR (PNP)

FEATURE ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.160v)

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltages, complementary pair with 2N5551. Applications General purpose high voltage amplifier.

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulate Transistors

FEATURES for general purpose, high volt As complementary types the NPN transistors 2N5551 are recommended. Low current(max. 600mA),High voltage(max.160V)

Plastic-Encapsulated Transistors

TO-92 Plastic-Encapsulated Transistors FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURE ● Switching and Amplification in High Voltage ● Applications such as Telephony ● Low Current(Max. 600mA) ● High Voltage(Max.160v)

PNP Transistor Plastic-Encapsulate Transi stors

PNP Transistor Plastic-Encapsulate Transistors FEATURES Power Dissipation PCM : 0.625 W (Tamb=25 ) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

PNP high-voltage transistor

DESCRIPTION • PNP high-voltage transistor • Low current (max. 300 mA) • High voltage (max. 160 V) • Complements to 2N5551. APPLICATIONS • Designed for Switching and amplification in high voltage applications , such as telephony applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Switching and Amplification in High Voltage ● Applications such as Telephony ● Low Current ● High Voltage

PNP General Purpose Amplifier

■ Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.150V)

General purpose amplifier

Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

TV Automatic Fine Tuning Circuit

Integrated Circuit Automatic Fine-Tuning Detector