丝印代码：2N5400；TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR • Collector-Base Voltage : VCEO = 120 V • Collector Dissipation : PC(max) = 625 mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : N