2N540晶体管资料

  • 2N540(A)别名:2N540(A)三极管、2N540(A)晶体管、2N540(A)晶体三极管

  • 2N540(A)生产厂家:美国硅晶体技术公司_SEM

  • 2N540(A)制作材料:Ge-NPN

  • 2N540(A)性质:开关管 (S)_功率放大 (L)

  • 2N540(A)封装形式:直插封装

  • 2N540(A)极限工作电压:80V

  • 2N540(A)最大电流允许值:3.5A

  • 2N540(A)最大工作频率:<1MHZ或未知

  • 2N540(A)引脚数:3

  • 2N540(A)最大耗散功率:34W

  • 2N540(A)放大倍数:β>45

  • 2N540(A)图片代号:D-112

  • 2N540(A)vtest:80

  • 2N540(A)htest:999900

  • 2N540(A)atest:3.5

  • 2N540(A)wtest:34

  • 2N540(A)代换 2N540(A)用什么型号代替

2N540价格

参考价格:¥0.4836

型号:2N5400 品牌:NTE 备注:这里有2N540多少钱,2025年最近7天走势,今日出价,今日竞价,2N540批发/采购报价,2N540行情走势销售排行榜,2N540报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N540

PNPGERMANIUMALLOYJUNCTIONPOWERTRANSISTOR

PNPGERMANIUMALLOYJUNCTIONPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SERIES2NTRANSISTORS

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PNPSiliconEpitaxialPlanarTransistors

PNPSiliconEpitaxialPlanarTransistors forgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypestheNPNtransistorsST2N5550andST2N5551arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

AMPLIFIERTRANSISTOR

PNPSilicon

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PNPPlasticEncapsulatedTransistor

FEATURES ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.130V)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PNPGeneralPurposeAmplifier

Thisdeviceisdesignedforuseasgeneralpurposeamplifiersandswitchesrequiringhighvoltages.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AMPLIFIERTRANSISTORPNPSILICON

PNPSilicon

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

Diotec

PNPSILICONPLANAREPITAXIALTRANSISTOR

AmplifierTransistor

CDIL

Continental Device India Limited

CDIL

PNPSiliconEpitaxialPlanarTransistors

PNPSiliconEpitaxialPlanarTransistors forgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypestheNPNtransistors2N5550and2N5551arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

TRANSISTOR(PNP)

FEATURE ●Switchingandamplificationinhighvoltage Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.130v)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

TO-92Plastic-EncapsulateTransistors

FEATURE Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(max.600mA) Higholtage(max.130v)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

AmplifierTransistor(PNPSilicon)

PNPSilicon

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

PNPEPITAXIALSILICONTRANSISTOR

AMPLIFIERTRANSISTOR •Collector-BaseVoltage:VCEO=120V •CollectorDissipation:PC(max)=625mW

SamsungSamsung semiconductor

三星三星半导体

Samsung

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications???

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications

SEMTECH

Semtech Corporation

SEMTECH

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-130V,VCEO=-120V •LowLeakageCurrent. :ICBO=-100nA(Max.)@VCB=-100V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC

TO-92Plastic-EncapsulateTransistors

FEATURE Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(max.600mA) Higholtage(max.130v)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-130V,VCEO=-120V •LowLeakageCurrent. :ICBO=-100nA(Max.)@VCB=-100V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:N

KECKEC CORPORATION

KEC株式会社

KEC

TO-92Plastic-EncapsulateTransistors

FEATURE Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(max.600mA) Higholtage(max.130v)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92Plastic-EncapsulateTransistors

Features SwitchingandAmplificationinHighVoltage ApplicationssuchasTelephony LowCurrent HighVoltage

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

AmplifierTransistor(PNPSilicon)

PNPSilicon

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

PNPGeneralPurposeAmplifier

PNPGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.SourcedfromProcess74.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications???

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications

SEMTECH

Semtech Corporation

SEMTECH

PNPhigh-voltagetransistor

ETC

知名厂家

PNPEPITAXIALSILICONTRANSISTOR

AMPLIFIERTRANSISTOR ●Collector-EmitterVoltage:VCEO=150V ●CollectorDissipation:Pc(max)=625mW

SamsungSamsung semiconductor

三星三星半导体

Samsung

TRANSISTOR(PNP)

FEATURE ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.160v)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

PNPGeneralPurposeAmplifier

■Features ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.150V)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

TRANSISTOR(PNP)

FEATURE ●SwitchingandAmplificationinHighVoltage ●ApplicationssuchasTelephony ●LowCurrent(Max.600mA) ●HighVoltage(Max.160v)

FS

First Silicon Co., Ltd

FS

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Highvoltages,complementarypairwith2N5551. Applications Generalpurposehighvoltageamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TRANSISTOR(PNP)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

PNPSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication)

Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-150V •Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551

AUK

AUK corp

AUK

AmplifierTransistors

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

PNPTransistors

PNPTransistors

WEITRON

Weitron Technology

WEITRON

HIGHVOLTAGESWITCHINGTRANSISTOR

HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES *Collector-emittervoltage:VCEO=-150V *Highcurrentgain

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

Plastic-EncapsulatedTransistors

TO-92Plastic-EncapsulatedTransistors FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

Diotec

PNPTransistorPlastic-EncapsulateTransistors

PNPTransistorPlastic-EncapsulateTransistors FEATURES PowerDissipation PCM:0.625W(Tamb=25) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PNPSiliconAmplifierTransistor625mW

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

AMPLIFIERTRANSISTORPNPSILICON

PNPSilicon

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

PNPEPITAXIALPLANARTRANSISTOR

Description The2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •ComplementstoNPNType2N5551. •HighCollector-EmitterBreakdownVoltage.VCEO=150V(@IC=1mA)

TGS

Tiger Electronic Co.,Ltd

TGS

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.160v)

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

DAYA

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

DCCOM

Dc Components

DCCOM

SERIES2NTRANSISTORS

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●SwitchingandAmplificationinHighVoltage ●ApplicationssuchasTelephony ●LowCurrent ●HighVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

AMPLIFIERTRANSISTOR

PNPSilicon

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PNPSiliconEpitaxialPlanarTransistors

PNPSiliconEpitaxialPlanarTransistors forgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypestheNPNtransistors2N5550and2N5551arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

Generalpurposeamplifier

Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage: VCBO=-160V,VCEO=-160V •Lowcollectorsaturationvoltage: VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

Plastic-EncapsulateTransistors

FEATURES forgeneralpurpose,highvolt AscomplementarytypestheNPNtransistors2N5551are recommended. Lowcurrent(max.600mA),Highvoltage(max.160V)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH

PNPhigh-voltagetransistor

DESCRIPTION •PNPhigh-voltagetransistor •Lowcurrent(max.300mA) •Highvoltage(max.160V) •Complementsto2N5551. APPLICATIONS •DesignedforSwitchingandamplification inhighvoltageapplications,suchastelephony applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

PNPEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltagePNPTransistorForGeneralPurposeAndTelephonyApplications.

CDIL

Continental Device India Limited

CDIL

2N540产品属性

  • 类型

    描述

  • 型号

    2N540

  • 制造商

    NJSEMI

  • 制造商全称

    New Jersey Semi-Conductor Products, Inc.

  • 功能描述

    PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR

更新时间:2025-5-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-92-3
2317
原厂订货渠道,支持BOM配单一站式服务
KEC
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
FSC
08+
TO-92
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
KEC
24+
SOT-23
154341
明嘉莱只做原装正品现货
FSC
21+
TO-92
2378
原装现货假一赔十
Slkor/萨科微
24+
TO-92
50000
Slkor/萨科微一级代理,价格优势
ON
2024
TO-92
70230
16余年资质 绝对原盒原盘代理渠道 更多数量
ON
21+
TO-92
6880
只做原装,质量保证
ON/安森美
24+
TO92
8950
BOM配单专家,发货快,价格低
Fairchild
24+
TO-92
3312

2N540芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

2N540数据表相关新闻