Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS PNP 120V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS PNP 120V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR • Collector-Base Voltage : VCEO = 120 V • Collector Dissipation : PC(max) = 625 mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : N