EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : N

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.\nHIGH VOLTAGE APPLICATION.FEATURES\n• High Collector Breakdwon Voltage\n   : VCBO=-130V, VCEO=-120V\n• Low Leakage Current.\n   : ICBO=-100nA(Max.) @VCB=-100V\n• Low Saturation Voltage\n   : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA\n• Low Noise : NF=8dB (Max.) • High Collector Breakdwon Voltage\n   : VCBO=-130V, VCEO=-120V\n• Low Leakage Current.\n   : ICBO=-100nA(Max.) @VCB=-100V\n• Low Saturation Voltage\n   : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA\n• Low Noise : NF=8dB (Max.);

EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.4 Kbytes Page：2 Pages

Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR • Collector-Base Voltage : VCEO = 120 V • Collector Dissipation : PC(max) = 625 mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)