PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications.

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR ● Collector-Emitter Voltage: VCEO = 150V ● Collector Dissipation: Pc (max) = 625mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

PNP Silicon Transistor (General purpose amplifier High voltage application)

Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO= -160V, VCEO= -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551

Amplifier Transistors

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

PNP Transistors

PNP Transistors

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

Amplifier Transistor(PNP Silicon)

PNP Silicon

Plastic-Encapsulated Transistors

TO-92 Plastic-Encapsulated Transistors FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

PNP Silicon Amplifier Transistor 625mW

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v)

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier applications.

PNP Transistor Plastic-Encapsulate Transi stors

PNP Transistor Plastic-Encapsulate Transistors FEATURES Power Dissipation PCM : 0.625 W (Tamb=25 ) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type 2N5551. • High Collector-Emitter Breakdown Voltage. VCEO=150V (@IC=1mA)

AMPLIFIER TRANSISTOR PNP SILICON

PNP Silicon

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Switching and Amplification in High Voltage ● Applications such as Telephony ● Low Current ● High Voltage

AMPLIFIER TRANSISTOR

PNP Silicon

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

Plastic-Encapsulate Transistors

FEATURES for general purpose, high volt As complementary types the NPN transistors 2N5551 are recommended. Low current(max. 600mA),High voltage(max.160V)

General purpose amplifier

Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

PNP high-voltage transistor

DESCRIPTION • PNP high-voltage transistor • Low current (max. 300 mA) • High voltage (max. 160 V) • Complements to 2N5551. APPLICATIONS • Designed for Switching and amplification in high voltage applications , such as telephony applications.

PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR High Voltage PNP Transistor For General Purpose And Telephony Applications.

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltages, complementary pair with 2N5551. Applications General purpose high voltage amplifier.

TRANSISTOR (PNP)

FEATURE ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.160v)

PNP General Purpose Amplifier

■ Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.150V)

TRANSISTOR (PNP)

FEATURE ● Switching and Amplification in High Voltage ● Applications such as Telephony ● Low Current(Max. 600mA) ● High Voltage(Max.160v)

TO-92 Plastic-Encapsulate Transistors

Features Switching and Amplification in High Voltage Applications such as Telephony Low Current High Voltage

PNP Epitaxial Planar Silicon High Voltage Transistor, 150Vceo, 600mA Ic

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Switching and Amplification in High Voltage

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PNP Silicon Amplifier Transistor 625mW

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Bipolar Transistor

中等功率双极型晶体管

晶体管

TO-92 PACKAGE

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HIGH VOLTAGE SWITCHING TRANSISTOR

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PNP Plastic Encapsulated Transistor

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封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS PNP 150V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain