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2N5401晶体管资料

2N5401别名：2N5401三极管、2N5401晶体管、2N5401晶体三极管
2N5401生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_美国得
2N5401制作材料：Si-PNP
2N5401性质：通用型（Uni）
2N5401封装形式：直插封装
2N5401极限工作电压：160V
2N5401最大电流允许值：0.6A
2N5401最大工作频率：>100MHZ
2N5401引脚数：3
2N5401最大耗散功率：0.625W
2N5401放大倍数：
2N5401图片代号：A-31
2N5401vtest：160
2N5401htest：100000100
2N5401atest：0.6
2N5401wtest：0.625

2N5401代换 2N5401用什么型号代替：BF491,BF492,BF493,2SA1221,2SA1222,2SA1319,3CA3F,

2N5401价格

参考价格：￥0.2902

型号：2N5401 品牌：MULTICOMP 备注：这里有2N5401多少钱，2025年最近7天走势，今日出价，今日竞价，2N5401批发/采购报价，2N5401行情走势销售排行榜，2N5401报价。

型号	功能描述	生产厂家&企业	LOGO
2N5401	PNP high-voltage transistor DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications.	Philips 飞利浦	Philips
2N5401	PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR ● Collector-Emitter Voltage: VCEO = 150V ● Collector Dissipation: Pc (max) = 625mW	Samsung 三星	Samsung
2N5401	PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications??? PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications	SEMTECH 升特	SEMTECH
2N5401	PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
2N5401	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE) GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)	KECKEC CORPORATION KEC株式会社	KEC
2N5401	COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2N5401	PNP Silicon Transistor (General purpose amplifier High voltage application) Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO= -160V, VCEO= -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551	AUK	AUK
2N5401	Amplifier Transistors Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*	ONSEMI 安森美半导体	ONSEMI
2N5401	Small Signal Transistors TO-92 Case (Continued) DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER	Central	Central
2N5401	PNP Transistors PNP Transistors	WEITRON	WEITRON
2N5401	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401	Amplifier Transistor(PNP Silicon) PNP Silicon	Motorola 摩托罗拉	Motorola
2N5401	Plastic-Encapsulated Transistors TO-92 Plastic-Encapsulated Transistors FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL 东电电子	TEL
2N5401	General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack	Diotec 德欧泰克	Diotec
2N5401	PNP Transistor Plastic-Encapsulate Transi stors PNP Transistor Plastic-Encapsulate Transistors FEATURES Power Dissipation PCM : 0.625 W (Tamb=25 ) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N5401	PNP Silicon Amplifier Transistor 625mW Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)	MCC 美微科	MCC
2N5401	TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v)	DAYA 大亚电器集团	DAYA
2N5401	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications.	DCCOM	DCCOM
2N5401	PNP EPITAXIAL PLANAR TRANSISTOR Description The 2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type 2N5551. • High Collector-Emitter Breakdown Voltage. VCEO=150V (@IC=1mA)	TGS	TGS
2N5401	AMPLIFIER TRANSISTOR PNP SILICON PNP Silicon	boca 博卡	boca
2N5401	Amplifier Transistors PNP Silicon Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*	ONSEMI 安森美半导体	ONSEMI
2N5401	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Switching and Amplification in High Voltage ● Applications such as Telephony ● Low Current ● High Voltage	JIANGSU 长电科技	JIANGSU
2N5401	AMPLIFIER TRANSISTOR PNP Silicon	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5401	SERIES 2N TRANSISTORS SERIES 2N TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5401	General purpose amplifier Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551	KODENSHI 可天士	KODENSHI
2N5401	Plastic-Encapsulate Transistors FEATURES for general purpose, high volt As complementary types the NPN transistors 2N5551 are recommended. Low current(max. 600mA),High voltage(max.160V)	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司	HOTTECH
2N5401	PNP Silicon Epitaxial Planar Transistors PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
2N5401	PNP high-voltage transistor DESCRIPTION • PNP high-voltage transistor • Low current (max. 300 mA) • High voltage (max. 160 V) • Complements to 2N5551. APPLICATIONS • Designed for Switching and amplification in high voltage applications , such as telephony applications.	ISC 无锡固电	ISC
2N5401	PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR High Voltage PNP Transistor For General Purpose And Telephony Applications.	CDIL	CDIL
2N5401	TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2N5401	Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltages, complementary pair with 2N5551. Applications General purpose high voltage amplifier.	FOSHAN 蓝箭电子	FOSHAN
2N5401	TRANSISTOR (PNP) FEATURE ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.160v)	KOOCHIN	KOOCHIN
2N5401	PNP General Purpose Amplifier ■ Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.150V)	KEXIN 科信电子	KEXIN
2N5401	TRANSISTOR (PNP) FEATURE ● Switching and Amplification in High Voltage ● Applications such as Telephony ● Low Current(Max. 600mA) ● High Voltage(Max.160v)	FS	FS
2N5401	TO-92 Plastic-Encapsulate Transistors Features Switching and Amplification in High Voltage Applications such as Telephony Low Current High Voltage	DGNJDZ 南晶电子	DGNJDZ
2N5401	PNP Epitaxial Planar Silicon High Voltage Transistor, 150Vceo, 600mA Ic 文件：248.25 Kbytes Page：2 Pages	MULTICOMP 易络盟	MULTICOMP
2N5401	Switching and Amplification in High Voltage 文件：444.15 Kbytes Page：4 Pages	RECTRON	RECTRON
2N5401	PNP Silicon Amplifier Transistor 625mW 文件：437.58 Kbytes Page：5 Pages	MCC 美微科	MCC
2N5401	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：235.08 Kbytes Page：4 Pages	UTC 友顺	UTC
2N5401	TO-92 PACKAGE 文件：30.7 Kbytes Page：1 Pages	KECKEC CORPORATION KEC株式会社	KEC
2N5401	PNP Plastic Encapsulated Transistor 文件：343.07 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N5401	封装/外壳：TO-226-3，TO-92-3 长体包装：散装描述：TRANS PNP 150V 0.6A TO92 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2N5401-A-AB3-B	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-A-AB3-K	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-A-AB3-R	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-A-T92-B	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-A-T92-K	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-A-T92-R	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-B-AB3-B	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-B-AB3-K	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-B-AB3-R	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-B-T92-B	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-B-T92-K	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-B-T92-R	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401C	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE) GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)	KECKEC CORPORATION KEC株式会社	KEC
2N5401-C-AB3-B	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-C-AB3-K	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-C-AB3-R	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-C-T92-B	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC
2N5401-C-T92-K	HIGH VOLTAGE SWITCHING TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain	UTC 友顺	UTC

2N5401产品属性

类型
描述
型号
2N5401
功能描述
两极晶体管 - BJT Bipolar Trans PNP,0.6A,150V
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2N5401供应商更多...

更新时间：2025-8-7 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	2N5401YTA	ON(安森美)	2511	TO-92-3L	9550	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市恒凯威科技开发有限公司	2N5401RLRAG	ON	21+	TO-92	6880	只做原装,质量保证	询价
上海意淼电子科技有限公司	2N5401	FSC	23+	NA	3500	全新原装假一赔十	询价
深圳市鸿昌盛电子科技有限公司	2N5401		2015+		200	公司现货库存	询价
深圳市坤融电子科技有限公司	2N5401G	ON/安森美	24+	TO92	8950	BOM配单专家,发货快,价格低	询价
中天科工半导体（深圳）有限公司	2N5401YTA	ON/安森美	25+	TO-92	32000	ON/安森美全新特价2N5401YTA即刻询购立享优惠#长期有货	询价
艾睿（深圳）半导体有限公司	2N5401	CJ(江苏长电/长晶)	2447	TO-92(TO-92-3)	105000	1000个/袋一级代理专营品牌!原装正品,优势现货,长	询价
深圳兆威电子有限公司	2N5401	CJ/长电	22+	TO-92	99000	原装正品现货,可开13点税	询价
深圳市一线半导体有限公司	2N5401		24+	TO-92	100000		询价
深圳市乐创天科技有限公司	2N5401	FAIRCHILD	2011	TO-92	189	全新原装正品现货	询价

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2N5401晶体管资料

2N5401价格

2N5401产品属性

2N5401供应商更多...

2N5401芯片相关品牌

2N5401规格书下载地址

2N5401参数引脚图相关

2N5401数据表相关新闻

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2N6043G

2N5245

2N3906

DdatasheetPDF页码索引