Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR • Collector-Base Voltage : VCEO = 120 V • Collector Dissipation : PC(max) = 625 mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

PNP Plastic Encapsulated Transistor

FEATURES ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max.600mA) ● High voltage(max.130V)

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring high voltages.

AMPLIFIER TRANSISTOR PNP SILICON

PNP Silicon

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

AMPLIFIER TRANSISTOR

PNP Silicon

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Amplifier Transistor

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

TRANSISTOR (PNP)

FEATURE ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.130v)

TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS PNP 120V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

小信号晶体管

晶体管

PNP General Purpose Amplifier

General Purpose PNP Transistors

文件：147.83 Kbytes Page：2 Pages

TO-92 Plastic-Encapsulate Transistors

文件：522.62 Kbytes Page：3 Pages

PNP General Purpose Amplifier

文件：311.22 Kbytes Page：9 Pages

TO-92 PACKAGE

文件：30.71 Kbytes Page：1 Pages

TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : N

TO-92 Plastic-Encapsulate Transistors

FEATURE Switching and mplification in igh oltage Applications such as elephony Low urrent(max. 600mA) High oltage(max.130v)

PNP General Purpose Amplifier

文件：311.22 Kbytes Page：9 Pages

PNP Plastic Encapsulated Transistor

文件：381.32 Kbytes Page：2 Pages

General Purpose PNP Transistors

文件：147.83 Kbytes Page：2 Pages

TO-92 PACKAGE

文件：30.71 Kbytes Page：1 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PNP 120V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.4 Kbytes Page：2 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.4 Kbytes Page：2 Pages