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型号	功能描述	生产厂家企业	LOGO
V20120S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：129.93 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3/ VF20120S-E3/ VB20120S-E3/ VI20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation\n;	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3_V01	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S_11	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：129.93 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S_12	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.47 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3_15	High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG_09	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG_11	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG_12	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.67 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-E3/4W	封装/外壳：TO-220-3 包装：管件描述：DIODE SCHOTTKY 120V 20A TO220AB 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
V20120SG-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SGHM3/4W	封装/外壳：TO-220-3 包装：卷带（TR）描述：DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
V20120SGHM3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SG-M3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120SHM3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：129.93 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V20120S-M3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：129.93 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
R20120	Silicon Power Rectifier Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability	MICROSEMI 美高森美	MICROSEMI
S20120	Silicon Power Rectifier Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability	MICROSEMI 美高森美	MICROSEMI
S20120	SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V	MICROSEMI 美高森美	MICROSEMI
CSD20120	RECTIFIER 文件：358.49 Kbytes Page：5 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
CSD20120D	RECTIFIER 文件：358.49 Kbytes Page：5 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

V20120S产品属性

类型
描述
型号
V20120S
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier

V20120S供应商更多...

更新时间：2026-7-31 18:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市旺财半导体有限公司	V20120S	VISHAY	25+	TO220	25368	原装正品，欢迎询价	询价
贸泽芯城（深圳）电子科技有限公司	V20120SG-M3/4W	VISHAY/威世	23+	TO-220AB	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市科恒伟业电子有限公司	V20120S-E3/4W	VISHAY/威世	2450+	TO-220	9850	只做原装正品现货或订货假一赔十!	询价
深圳市安富世纪电子有限公司	V20120S-E3/4W	VISHAY	23+	TO220	50000	全新原装正品现货,支持订货	询价
深圳市赛美科科技有限公司	V20120SG	VISHAY		TO220	53650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市星宇佳科技有限公司	V20120S-E3/4W	VISHAY/威世	14+	TO-220	53000		询价
深圳市达恩科技有限公司	V20120S-E3/4W	Vishay	24+	NA	3000	进口原装正品优势供应	询价
深圳市拓亿芯电子有限公司	V20120S-E3/4W	VISHAY/威世	25+	TO-220	30000	全新原装现货,价格优势	询价
深圳市华斯顿科技有限公司	V20120SG	VISHAY原装	25+23+	TO-220	23548	绝对原装正品全新进口深圳现货	询价
深圳市卓越微芯电子有限公司	V20120S-E3/4W	VISHAY	25+	TO220	150	百分百原装正品真实公司现货库存本公司只做原装可	询价

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V20120S规格书下载地址

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V20120S数据表相关新闻

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V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31

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找IC，尽在114IC

V20120S产品属性

V20120S供应商更多...

V20120S芯片相关品牌

V20120S规格书下载地址

V20120S参数引脚图相关

V20120S数据表相关新闻

V23047-A1024-A511

UZ1086G-SOT223R-AD-TG_UTC代理商

V23079D2001B301

UXN40M7K

V15PM15-M3/H

V23079-A1006-B201

DdatasheetPDF页码索引