型号 功能描述 生产厂家 企业 LOGO 操作
V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2

VishayVishay Siliconix

威世科技

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

文件:150.35 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

VishayVishay Siliconix

威世科技

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.33 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 包装:管件 描述:DIODE SCHOTTKY 120V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High Voltage Trench MOS Barrier Schottky Rectifier

文件:150.35 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.33 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2

VishayVishay Siliconix

威世科技

High Voltage Trench MOS Barrier Schottky Rectifier

文件:150.35 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V20120S-E3产品属性

  • 类型

    描述

  • 型号

    V20120S-E3

  • 功能描述

    肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-10-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
3455
原厂直销,现货供应,账期支持!
VISHAY/威世
22+
TO-220
100000
代理渠道/只做原装/可含税
VISHAY/威世
14+
TO-220
53000
深圳原装进口无铅现货
VISHAY/威世
24+
TO-220
53000
只做原厂渠道 可追溯货源
VISHAY/威世
24+
TO-220
43200
郑重承诺只做原装进口现货
VISHAY
24+
TO-220
5000
全新原装正品,现货销售
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
24+
TO-220
9600
原装现货,优势供应,支持实单!
VIS
23+
TO-220AB
6000
原装正品,支持实单
VISHAY/威世
2447
TO220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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