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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2 | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 120V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
V20120S-E3产品属性
- 类型
描述
- 型号
V20120S-E3
- 功能描述
肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
3455 |
原厂直销,现货供应,账期支持! |
|||
VISHAY |
2016+ |
TO-220 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY/威世 |
1643 |
TO-220 |
700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
14+ |
TO-220 |
53000 |
深圳原装进口无铅现货 |
|||
VISHAY/威世 |
24+ |
TO-220 |
53000 |
只做原厂渠道 可追溯货源 |
|||
VISHAY/威世 |
24+ |
TO-220 |
43200 |
郑重承诺只做原装进口现货 |
|||
VISHAY |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
TO-220 |
7437 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
VISHAY/威世 |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
V20120S-E3芯片相关品牌
V20120S-E3规格书下载地址
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V20120S-E3数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14V23079D2001B301
V23079D2001B301
2022-12-2UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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