位置：首页 > IC中文资料第7122页 > V20120SG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.67 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：带盒（TB） 描述：DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Silicon Power Rectifier Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability | MICROSEMI 美高森美 | | ||
Silicon Power Rectifier Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
RECTIFIER 文件：358.49 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RECTIFIER 文件：358.49 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
V20120SG产品属性
- 类型
描述
- 型号
V20120SG
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LITTELFUSE/力特 |
20+ |
SMD |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
23+ |
TO-220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
TO220 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
PHI |
25+ |
TQFP64 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
SENSORTEK/昇佳 |
2450+ |
SMD |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SIEMENS |
22+ |
QFP-160 |
5000 |
只做原装鄙视假货15118075546 |
|||
SENSROTEK |
25+ |
20000 |
原装现货 只做自己公司真实库存 |
||||
VISHAY原装 |
25+23+ |
TO-220 |
23548 |
绝对原装正品全新进口深圳现货 |
|||
SIEMENS |
25+ |
QFP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
OMRON/欧姆龙 |
2608+ |
/ |
473077 |
一级代理，原装现货 |
V20120SG芯片相关品牌
V20120SG规格书下载地址
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V20120SG数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14V23079D2001B301
V23079D2001B301
2022-12-2UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
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