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V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VISHAYVishay Siliconix

威世威世科技公司

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:164.09 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:160.88 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:160.88 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:124.67 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:164.09 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:160.88 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:带盒(TB) 描述:DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

MICROSEMI

美高森美

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V

MICROSEMI

美高森美

RECTIFIER

文件:358.49 Kbytes Page:5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

RECTIFIER

文件:358.49 Kbytes Page:5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

V20120SG产品属性

  • 类型

    描述

  • 型号

    V20120SG

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2026-3-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
2026+
TO220
54648
百分百原装现货 实单必成 欢迎询价
VISHAY/威世
24+
TO220
990000
明嘉莱只做原装正品现货
VISHAY原装
25+23+
TO-220
23548
绝对原装正品全新进口深圳现货
VISHAY
TO220
53650
一级代理 原装正品假一罚十价格优势长期供货
Vishay/GeneralSemiconduc
24+
TO-220AB
1326
VISHAY/威世
23+
TO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
20+
T0-220
2000
现货很近!原厂很远!只做原装
VISHAY原装
24+
TO-220
30980
原装现货/放心购买
VISHAY
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品

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