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型号	功能描述	生产厂家企业	LOGO
UPD45128163	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A10	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A10-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A10B	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A10B-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A10I-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A10LI-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A10LT-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A10T-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A75-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A75I-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75I-9JF-E	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75LI-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75LI-9JF-E	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75LT-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75T-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A80	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A80-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163G5-A80I-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A80LI-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A80LT-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A80T-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163-I	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128163-I-E	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive	ELPIDA 尔必达	ELPIDA
UPD45128163-T	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	ELPIDA 尔必达	ELPIDA
UPD45128441	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A10	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A10-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A10B	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A10B-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A75-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A80	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128441G5-A80-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A10	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A10-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A10B	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A10B-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A75	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A75-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A80	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128841G5-A80-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi	NEC 瑞萨	NEC
UPD45128163-A75L	128M-bit Synchronous DRAM 4-bank, LVTTL	Micron 美光	Micron
UPD45128163-A75L	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163-E	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：932.36 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A10-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A10-9JF	128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3V	Micron 美光	Micron
UPD45128163G5-A10LT-9JF	128M-bit (2M x 16-bit x 4-bank), synchronous DRAM LVTTL, 100 MHz	Micron 美光	Micron
UPD45128163G5-A75-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75-9JF-E	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：932.36 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75A-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A75L-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A80-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
UPD45128163G5-A80L-9JF	128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages	ELPIDA 尔必达	ELPIDA
451	Low-Cost, Versatile, 10/100kHz Frequency to Voltage Converters 文件：44.12 Kbytes Page：1 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
451	Low-Cost, Versatile, 10/100kHz Frequency to Voltage Converters 文件：1.47546 Mbytes Page：6 Pages	INTRONICS	INTRONICS
451	Capacity (20-hour) 180Ah 文件：304.56 Kbytes Page：1 Pages	GSYUASABATTERY	GSYUASABATTERY
451	Ribbon Cable Wiremount Socket Assembly 文件：126.46 Kbytes Page：2 Pages	3M	3M

替换型号	功能描述	生产厂家企业	LOGO
4518	SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER	RENESAS 瑞萨	RENESAS
CD4518B	CMOS DUAL UP-COUNTERS	TI 德州仪器	TI
CD4518BE	CMOS DUAL UP-COUNTERS	TI 德州仪器	TI
CD4518BF	CMOS DUAL UP-COUNTERS	TI 德州仪器	TI
HD14518B	Dual BCD Up Counter, Dual Binary Up Counter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HEF4518BD	Dual BCD counter	Philips 飞利浦	Philips
HEF4518BP	Dual BCD counter	Philips 飞利浦	Philips
MC14518	Dual Up Counters	ONSEMI 安森美半导体	ONSEMI
MC14518B	Dual Up Counters	ONSEMI 安森美半导体	ONSEMI
MC14518B	Dual Up Counters	ONSEMI 安森美半导体	ONSEMI
MC14518B	DUAL UP COUNTERS	Motorola 摩托罗拉	Motorola
MC14518BCP	Dual Up Counters	ONSEMI 安森美半导体	ONSEMI
MC14518BCP	Dual Up Counters	ONSEMI 安森美半导体	ONSEMI
SCL4518B	CMOS DUAL UP COUNTERS	ETC1	ETC1

UPD451产品属性

类型
描述
型号
UPD451
制造商
Renesas Electronics Corporation
功能描述
128 MBIT SDRAM

UPD451供应商更多...

更新时间：2025-12-26 16:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市鸿昌盛电子科技有限公司	UPD45128841G5-A75	NEC	25+		10	公司现货库存	询价
深圳市一线半导体有限公司	UPD45128841G5-A75-9JF	NEC	24+	TSSOP54	20		询价
齐创科技(上海,北京,青岛)有限公司	UPD4512D	原厂正品	23+	PLCC-84	5000	原装正品,假一罚十	询价
深圳市昌和盛利电子有限公司	UPD4512BC	NEC	NEW	DIP16P	8293	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
上海鑫科润电子科技有限公司	UPD4512BC	NEC	92+	DIP16P	7	原装现货海量库存欢迎咨询	询价
深圳市益百分电子有限公司	UPD4512BC	NEC	84+	DIP16	2245	全新原装进口自己库存优势	询价
深圳市纳艾斯科技有限公司	UPD4512BG	NEC	24+	SOP	8000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市欧立现代科技有限公司	UPD4512BC	NEC	24+	DIP16P	6868	原装现货,可开13%税票	询价
深圳市宇创芯科技有限公司	UPD4514BC	NEC	24+	DIP-24	9600	原装现货,优势供应,支持实单!	询价
深圳市星佑电子有限公司	UPD4512BG	NEC	00+	SOP	40	全新原装100真实现货供应	询价

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UPD30181AYF1-131-GA3-A 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
2021-9-3
UPD720114GA-YEU-AT
UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22
UPD720114GA-9EU-A
UPD720114GA-9EU-A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22
UPD16818GR-8JG-步进电机控制器/驱动器
描述该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。特征 •兼容电源电压3V-/5V- •引脚兼容与mPD16803 •低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻 R
2013-2-5
UPD16813-整体式双H桥驱动器电路
描述该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。特征 •低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。 •低电流消耗：国际直拨电话= 100 mA最大。 •降噪电路，操作时INC已关闭。 •小型表面贴装封装：16引脚SOP的塑
2013-2-5

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DdatasheetPDF页码索引

UPD30181AYF1-131-GA3-A 瑞智芯只有原装