位置：首页 > IC中文资料第619页 > UPD451
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：932.36 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：932.36 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
128M-bitSynchronousDRAM4-bank,LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
Low-Cost,Versatile,10/100kHzFrequencytoVoltageConverters 文件：1.47546 Mbytes Page：6 Pages | INTRONICS Intronics Power, Inc. |  | | |
RibbonCableWiremountSocketAssembly 文件：126.46 Kbytes Page：2 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  | | |
Capacity(20-hour)180Ah 文件：304.56 Kbytes Page：1 Pages | GSYUASABATTERYGS Yuasa Battery Sales UK Ltd GSYUASABATTERYGS Yuasa Battery Sales UK Ltd |  | | |
NANO2FUSEVeryFast-Acting451/453Series 文件：102.39 Kbytes Page：1 Pages | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 |  | | |
Low-Cost,Versatile,10/100kHzFrequencytoVoltageConverters 文件：44.12 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
CMOS DUAL UP-COUNTERS | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
CMOS DUAL UP-COUNTERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
CMOS DUAL UP-COUNTERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
Dual BCD Up Counter, Dual Binary Up Counter | HitachiHitachi, Ltd. 日立公司 |  | | |
Dual BCD counter | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
Dual BCD counter | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual Up Counters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Dual Up Counters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Dual Up Counters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL UP COUNTERS | MotorolaMotorola, Inc 摩托罗拉 |  | | |
Dual Up Counters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Dual Up Counters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
CMOS DUAL UP COUNTERS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | |
UPD451产品属性
- 类型
描述
- 型号
UPD451
- 制造商
Renesas Electronics Corporation
- 功能描述
128 MBIT SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ELPIDA |
2016+ |
TSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ELPIDA |
23+ |
NA/ |
3574 |
原厂直销,现货供应,账期支持! |
|||
ELPIDA |
22+ |
TSOP |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
|||
ELPIDA |
2016+ |
TSOP |
6523 |
只做原装正品现货!或订货! |
|||
ELPIDA |
TSOP |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
NEC |
23+ |
NA |
2176 |
专做原装正品,假一罚百! |
|||
NEC |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
ELPIDA |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
NEC |
23+ |
TSOP/54 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
NEC |
23+ |
DIP16P |
8293 |
UPD451芯片相关品牌
UPD451规格书下载地址
UPD451参数引脚图相关
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UPD451数据表相关新闻
UPD720201K8-701-BAC-A
UPD720201K8-701-BAC-A中文资料，PDF，数据手册
2024-5-20UPD30181AYF1-131-GA3-A 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
2021-9-3UPD720114GA-YEU-AT
UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD720114GA-9EU-A
UPD720114GA-9EU-A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD16818GR-8JG-步进电机控制器/驱动器
描述该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。特征•兼容电源电压3V-/5V-•引脚兼容与mPD16803•低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻R
2013-2-5UPD16813-整体式双H桥驱动器电路
描述该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。特征•低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。•低电流消耗：国际直拨电话=100mA最大。•降噪电路，操作时INC已关闭。•小型表面贴装封装：16引脚SOP的塑
2013-2-5
DdatasheetPDF页码索引
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