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UPD45128163-T中文资料

厂家型号

UPD45128163-T

文件大小

774.7Kbytes

页面数量

86

功能描述

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ELPIDA

UPD45128163-T数据手册规格书PDF详情

Description

The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).

These products are packaged in 54-pin TSOP (II)

Features

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0(A13) and BA1(A12)

• Byte control (×16) by LDQM and UDQM

• Programmable Wrap sequence (Sequential / Interleave)

• Programmable burst length (1, 2, 4, 8 and full page)

• Programmable /CAS latency (2 and 3)

• Ambient temperature (TA): −20 to + 85°C

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• ×4, ×8, ×16 organization

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible inputs and outputs

• 4,096 refresh cycles / 64 ms

• Burst termination by Burst stop command and Precharge command

更新时间:2025-12-18 18:43:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ELPIDA
TSOP
125000
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ELPIDA
22+
TSOP
20000
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NEC
23+
NA
2176
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NEC
84+
DIP16
2245
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NEC
24+
DIP16P
6868
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NEC
17+
DIP16
9988
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塑封NEC可看货
24+
DIP16
80000
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NEC
NEW
DIP16P
8293
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NEC
25+
SOP
2659
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NEC
50
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