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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
UPD45128163 | 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 |   | |
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：932.36 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：932.36 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL 文件：821.74 Kbytes Page：86 Pages | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | NEC 瑞萨 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 2,097,152 ×16 ×4 (word ×bit ×bank). The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the posit | ELPIDA 美光科技 | | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. Features • Fully Synchronous Dynamic RAM, with all signals referenc | ELPIDA 美光科技 | |
UPD45128163产品属性
- 类型
描述
- 型号
UPD45128163
- 制造商
Renesas Electronics Corporation
- 功能描述
128 MBIT SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
8110 |
原厂直销,现货供应,账期支持! |
|||
NEC |
24+ |
TSOP |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
2016+ |
TSOP54 |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
ELPIDA |
2023+ |
TSOP54 |
6893 |
专注全新正品,优势现货供应 |
|||
ELPIDA |
25+23+ |
TSOP |
12971 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
TSOP |
880000 |
明嘉莱只做原装正品现货 |
|||
ELPIA |
24+ |
TSSOP54 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ELPIDA |
0512 |
49 |
公司优势库存 热卖中! |
||||
NEC |
2402+ |
TSOP |
8324 |
原装正品!实单价优! |
|||
NEC |
24+ |
TSOP54 |
540 |
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
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2013-2-5
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