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UPA81价格

参考价格：￥4.7301

型号：UPA810T-A 品牌：CEL 备注：这里有UPA81多少钱，2026年最近7天走势，今日出价，今日竞价，UPA81批发/采购报价，UPA81行情走势销售排行榜，UPA81报价。

型号	功能描述	生产厂家企业	LOGO
UPA810	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla	NEC 瑞萨	NEC
UPA810T	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High Gain \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • A Small Mini Mold Package A	RENESAS 瑞萨	RENESAS
UPA810TC	NPN SILICON RF TWIN TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super	RENESAS 瑞萨	RENESAS
UPA810TC	NPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 x 2SC5006)FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION\nThe µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band.FEATURES\n• Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High gain: \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• Flat-lead 6-pin thi • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High gain: \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• Flat-lead 6-pin thin-type ultra super minimold\n• Built-in 2 transistors (2 ×2SC5006);	RENESAS 瑞萨	RENESAS
UPA810TC	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla	NEC 瑞萨	NEC
UPA810TC-T1	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla	NEC 瑞萨	NEC
UPA810TF	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing compo nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for	NEC 瑞萨	NEC
UPA810TF	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION\nThe UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing compo nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw • SMALL PACKAGE OUTLINE:\n SOT-363 package measures just 2 mm x 1.25 mm\n• LOW HEIGHT PROFILE: Just 0.60 mm hight\n• HIGH COLLECTOR CURRENT: ICMAX = 100 mA;	RENESAS 瑞萨	RENESAS
UPA810T-T1	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High Gain \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • A Small Mini Mold Package A	RENESAS 瑞萨	RENESAS
UPA810T-T1	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ×2SC4226) SMALL MINI MOLD The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.FEATURES\n• Low Noise\n NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High Gain\n \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• A Small Mini Mold Package Adopt • Low Noise\n NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High Gain\n \|S21e\|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• A Small Mini Mold Package Adopted\n• Built-in 2 Transistors (2 ×2SC4226);	RENESAS 瑞萨	RENESAS
UPA811	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold	NEC 瑞萨	NEC
UPA811T	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold	NEC 瑞萨	NEC
UPA811T	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold	RENESAS 瑞萨	RENESAS
UPA811T-T1	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold	RENESAS 瑞萨	RENESAS
UPA811T-T1	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold	NEC 瑞萨	NEC
UPA812	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain \|S21e\|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M	NEC 瑞萨	NEC
UPA812T	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain \|S21e\|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M	NEC 瑞萨	NEC
UPA812T	SILICON TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC4227) SMALL MINI MOLD FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain \|S21e\|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini Mold Package Adopted	RENESAS 瑞萨	RENESAS
UPA812T-T1	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain \|S21e\|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M	NEC 瑞萨	NEC
UPA813	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f	NEC 瑞萨	NEC
UPA813T	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f	NEC 瑞萨	NEC
UPA813T	SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC4570) SMALL MINI MOLD FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transisto	RENESAS 瑞萨	RENESAS
UPA813T-T1	SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC4570) SMALL MINI MOLD FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transisto	RENESAS 瑞萨	RENESAS
UPA813T-T1	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f	NEC 瑞萨	NEC
UPA814	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)	NEC 瑞萨	NEC
UPA814T	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC5193) SMALL MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolu	RENESAS 瑞萨	RENESAS
UPA814TC	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)	NEC 瑞萨	NEC
UPA814TC-T1	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)	NEC 瑞萨	NEC
UPA814TF	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The UPA814TF contains two NE688 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw	NEC 瑞萨	NEC
UPA81C	LED, LAMP DRIVER NPN SILICON EPTAXIAL DARLINGTON TRANSISTOR ARRAY DESCRIPTION The μPA81C is a monolithic array of seven darlington transistors. This device is especially suited for driving LED, lamps and printer hummers with MOS output signal. FEATURES ● High DC current gain. ● High output drive current. ● Package is 16 plastic DIP (Dual In-Line Package).	NEC 瑞萨	NEC
UPA810T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：207.42 Kbytes Page：3 Pages	CEL	CEL
UPA810T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：486.37 Kbytes Page：2 Pages	CEL	CEL
UPA810T_09	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：486.37 Kbytes Page：2 Pages	CEL	CEL
UPA810T_V1	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：486.37 Kbytes Page：2 Pages	CEL	CEL
UPA810T-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：486.37 Kbytes Page：2 Pages	CEL	CEL
UPA810T-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：207.42 Kbytes Page：3 Pages	CEL	CEL
UPA810T-T1	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：207.42 Kbytes Page：3 Pages	CEL	CEL
UPA810T-T1	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：486.37 Kbytes Page：2 Pages	CEL	CEL
UPA810T-T1	封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）描述：RF TRANS 2 NPN 12V 4.5GHZ 6SO 分立半导体产品晶体管 - 双极（BJT）- 射频	CEL	CEL
UPA810T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：486.37 Kbytes Page：2 Pages	CEL	CEL
UPA810T-T1-A	封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363 分立半导体产品晶体管 - 双极（BJT）- 射频	CEL	CEL
UPA810T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：207.42 Kbytes Page：3 Pages	CEL	CEL
UPA811T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：194.94 Kbytes Page：4 Pages	CEL	CEL
UPA811T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes Page：3 Pages	CEL	CEL
UPA811T_09	NPN SILICON HIGH 文件：480.88 Kbytes Page：3 Pages	CEL	CEL
UPA811T_V1	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes Page：3 Pages	CEL	CEL
UPA811T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：194.94 Kbytes Page：4 Pages	CEL	CEL
UPA811T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes Page：3 Pages	CEL	CEL
UPA812T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：485.62 Kbytes Page：3 Pages	CEL	CEL
UPA812T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：195.94 Kbytes Page：4 Pages	CEL	CEL
UPA812T_09	NPN SILICON HIGH 文件：485.62 Kbytes Page：3 Pages	CEL	CEL
UPA812T_V1	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：485.62 Kbytes Page：3 Pages	CEL	CEL
UPA812T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：485.62 Kbytes Page：3 Pages	CEL	CEL
UPA812T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：195.94 Kbytes Page：4 Pages	CEL	CEL
UPA814T	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：157.91 Kbytes Page：4 Pages	CEL	CEL
UPA814T-T1-A	NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：157.91 Kbytes Page：4 Pages	CEL	CEL

替换型号	功能描述	生产厂家企业	LOGO
M54517P	7 UNIT 400MA DARLINGTON TRANSISTOR ARRAY	MITSUBISHI 三菱电机	MITSUBISHI
M54519P	7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY	MITSUBISHI 三菱电机	MITSUBISHI
NTE2079	Integrated Circuit 7-Stage Darlington Transistor Array	NTE	NTE
TD62104P	7CH DARLINGTON SINK DRIVER	TOSHIBA 东芝	TOSHIBA

UPA81产品属性

类型
描述
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UPA81C Data Sheet

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更新时间：2026-5-18 8:56:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宇创芯科技有限公司	UPA81C	NEC	24+	DIP16	9600	原装现货,优势供应,支持实单!	询价
深圳市宇集芯电子有限公司	UPA81C	NEC	25+	DIP-16	90000	一级代理商进口原装现货、价格合理	询价
深圳市欧立现代科技有限公司	UPA81C	NEC	24+	DIP16P	6868	原装现货,可开13%税票	询价
深圳市粤骏腾电子科技有限公司	UPA81C	NEC	24+	DIP	16077	大批量供应优势库存热卖	询价
深圳市凌旭科技有限公司	UPA81C	NEC	2016+	DIP16	3900	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市东来宝电子科技有限公司	UPA81C	NEC	24+	DIP-16	663300	郑重承诺只做原装进口现货	询价
深圳市华来深电子有限公司	UPA81C	NEC	23+	DIP-16	8560	受权代理!全新原装现货特价热卖!	询价
深圳市益百分电子有限公司	UPA81C	NEC	90+	DIP16	2890	全新原装进口自己库存优势	询价
深圳深宇韬电子科技有限公司	UPA81C	NEC	2023+	DIP-16	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市亿联芯电子科技有限公司	UPA81C	NEC	2023+	DIP16	6895	原厂全新正品旗舰店优势现货	询价

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描述 mPC317是正电压可调三端稳压器，其中有1.5一个输出电流能力。可以由两个外部电阻设置输出电压1.3 V和30 V之间的任何值。特点 •超过1.5 A的输出电流 •芯片上的一些保护电路（过电流保护，SOA保护和热关机）。
2013-1-9

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