MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ´ 2SC5193) SMALL MINI MOLD

FEATURES

• Low Voltage Operation, Low Phase Distortion

• Low Noise

NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

• Large Absolute Maximum Collector Current

IC = 100 mA

• A Small Mini Mold Package Adopted

• Built-in 2 Transistors (2 ´ 2SC5193)