HIGH-FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ´ 2SC4227) SMALL MINI MOLD

FEATURES

• Low Noise

NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• High Gain

|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• A Small Mini Mold Package Adopted

• Built-in 2 Transistors (2 ´ 2SC4227)