HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High Gain |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • A Small Mini Mold Package A

NPN SILICON HIGH FREQUENCY TRANSISTOR

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NPN SILICON HIGH FREQUENCY TRANSISTOR

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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing compo nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High Gain |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • A Small Mini Mold Package A

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes Page：2 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes Page：2 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes Page：2 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes Page：3 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes Page：3 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes Page：2 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT） 描述：RF TRANS 2 NPN 12V 4.5GHZ 6SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT） 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON HIGH FREQUENCY TRANSISTOR

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NPN SILICON HIGH FREQUENCY TRANSISTOR

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efficient and cost-effective solution to wear problems on the shaft.

� DESCRIPTION The BECA 810 profile is a standard stainless steel sleeve. � APPLICATIONS Hubs Pinions Differentials Gear boxes Crankshafts � DESCRIPTION The BECA 811 profile is a premium stainless steel sleeve with a hard chrome treatment. � APPLICATIONS Hubs Pinions Different

Cartridge Fuse Holders Enclosed Fuseholders > Circuit Board Mounted

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FUSE HOLDER SELECTION GUIDE

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PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses

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High-volume Vertical Display Mounting Applications

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