位置：首页 > IC中文资料第8400页 > UPA811
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPA811 | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold | NEC 瑞萨 |   | |
UPA811 | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD | RENESAS 瑞萨 | | |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold | RENESAS 瑞萨 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold | NEC 瑞萨 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold | NEC 瑞萨 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold | RENESAS 瑞萨 | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes Page：3 Pages | CEL | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：194.94 Kbytes Page：4 Pages | CEL | | ||
NPN SILICON HIGH 文件：480.88 Kbytes Page：3 Pages | CEL | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes Page：3 Pages | CEL | | ||
封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF TRANS 2 NPN 10V 8GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：480.88 Kbytes Page：3 Pages | CEL | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：194.94 Kbytes Page：4 Pages | CEL | | ||
3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS 文件：171.85 Kbytes Page：12 Pages | TELCOM | | ||
3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS 文件：171.85 Kbytes Page：12 Pages | TELCOM | | ||
3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS 文件：171.85 Kbytes Page：12 Pages | TELCOM | |
UPA811产品属性
- 类型
描述
- 型号
UPA811
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
DIP16 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS/瑞萨 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
2002 |
DIP-16P |
2405 |
原装现货海量库存欢迎咨询 |
|||
SOT-363SO |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CEL |
24+ |
原厂原封 |
1000 |
原装正品 |
|||
RENESAS/瑞萨 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
NEC |
25+ |
R6SMM3000PCS |
2987 |
绝对全新原装现货供应! |
|||
NEC |
24+ |
DIP16P |
6868 |
原装现货,可开13%税票 |
|||
RENESAS/瑞萨 |
22+ |
N/A |
18000 |
现货,原厂原装假一罚十! |
|||
NEC |
22+ |
SOT-363 |
20000 |
公司只做原装 品质保障 |
UPA811规格书下载地址
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DdatasheetPDF页码索引
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