HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：606.19 Kbytes Page：9 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：236.48 Kbytes Page：10 Pages

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：606.19 Kbytes Page：9 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：236.48 Kbytes Page：10 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：606.19 Kbytes Page：9 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF TRANS 2 NPN 10V 7GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF TRANS 2 NPN 10V 7GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：606.19 Kbytes Page：9 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：236.48 Kbytes Page：10 Pages

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 20-35 AMP, STANDARD HIGH EFFICIENCY, ESP SERIES

• Current ratings to 35A • VRRM to 150V • Only fused-in-glass diodes used • 150 °C junction temperature • Surge ratings to 25A • Recovery time: 50nS • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • Sn/Pb terminations

INTERCONNECTS .100??Grid (.030??dia.) Pins, Straight and Right Angle Double Row

文件：300.59 Kbytes Page：1 Pages

Panel Mount for 5x20 mm und 6.3x32 mm Fuses

文件：178.31 Kbytes Page：1 Pages

M8 Plastic Passive I/O Box

文件：165.5 Kbytes Page：2 Pages